Improving etch selectivity and stability of novolak based negative resists by fluorine plasma treatment

Blideran, Marius M.; Häffner, M.; Schuster, Britt‐Elfriede; Raisch, C.; Weigand, H.; Fleischer, Monika; Peisert, Heiko; Chassé, T.; Kern, D. P.

doi:10.1016/j.mee.2008.12.057

Cited by 4 publications

(1 citation statement)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Positive resists offer high resolution and easy removal, making for excellent wet etch and lift-off masks in metal deposition. In contrast, negative tone resists [5] cross-link into chemically inert molecules, making for excellent masks in substrate dry etching [6]. Additionally, processed negative resist becomes a permanent structure, making it well suited to the direct fabrication of nanoimprint lithography templates [7], or permanent optical [8,9], microfluidic [10], or microelectromechanical [11] structures.…”

Section: Introductionmentioning

confidence: 99%

mr-EBL: ultra-high sensitivity negative-tone electron beam resist for highly selective silicon etching and large-scale direct patterning of permanent structures

2021

View full text Add to dashboard Cite

Electron beam lithography (EBL) is the state-of-the-art technique for rapid prototyping of nanometer-scale devices. Even so, processing speeds remain limited for the highest resolution patterning. Here, we establish Mr-EBL as the highest throughput negative tone electron-beam-sensitive resist. The 10 μC cm−2 dose requirement enables fabricating a 100 mm2 photonic diffraction grating in a ten minute EBL process. Optimized processing conditions achieve a critical resolution of 75 nm with 3× faster write speeds than SU-8 and 1–2 orders of magnitude faster write speeds than maN-2400 and hydrogen silsesquioxane. Notably, these conditions significantly differ from the manufacturers’ recommendations for the recently commercialized Mr-EBL resist. We demonstrate Mr-EBL to be a robust negative etch mask by etching silicon trenches with aspect ratios of 10 and near-vertical sidewalls. Furthermore, our optimized processing conditions are suitable to direct patterning on integrated circuits or delicate nanofabrication stacks, in contrast to other negative tone EBL resists. In conclusion, Mr-EBL is a highly attractive EBL resist for rapid prototyping in nanophotonics, MEMS, and fluidics.

show abstract

Section: Introductionmentioning

confidence: 99%

mr-EBL: ultra-high sensitivity negative-tone electron beam resist for highly selective silicon etching and large-scale direct patterning of permanent structures

2021

View full text Add to dashboard Cite

show abstract

Proton beam writing a platform technology for high quality three-dimensional metal mold fabrication for nanofluidic applications

Kan¹,

Shao²,

Wang³

et al. 2011

Microsyst Technol

View full text Add to dashboard Cite

Direct write nanolithographic techniques are powerful techniques to fabricate masters for nano-imprint lithography (NIL). Proton beam writing (PBW) is a relatively new technique which has shown great potential in fabricating three-dimensional (3D) nanostructures in polymer resist material down to the 20 nm level. MeV protons generate secondary electrons and like in many lithographic processes these electrons modify the molecular structure of the resist. The energies of the proton induced secondary electrons are relatively low compared with secondary electrons generated using electron beam writing, therefore proton induced secondary electrons only modify resist material within several nano meters of the proton track. Since protons mainly interact with the substrate electrons the path of the proton beam is very straight, resulting in smooth and well defined resist structures with practically no proximity effects. Further development of current proton beam technology, required to approach sub 10 nm structuring with MeV protons is discussed. To explore the full micro-and nano-fabricating capabilities of PBW it is important to investigate potential new resist materials. In PBW mass production can be achieved through the fabrication of reliable molds and stamps. The compatibility of MeV proton beams for resist materials and post processing steps like electroplating and resist removal are evaluated. The second focus of this paper is PDMS nanofluidic lab on a chip sorting devices using high quality Ni molds. These molds have been prepared via PBW and Ni electroplating, a release layer on a Ni mold allows fine feature replication down to the 300 nm level with high aspect ratios in PDMS.

show abstract

Organic solvent-free water-developable sugar resist material derived from biomass in green lithography

Takei

Oshima

Ichikawa

et al. 2014

Microelectronic Engineering

View full text Add to dashboard Cite

Improving etch selectivity and stability of novolak based negative resists by fluorine plasma treatment

Cited by 4 publications

References 14 publications

mr-EBL: ultra-high sensitivity negative-tone electron beam resist for highly selective silicon etching and large-scale direct patterning of permanent structures

mr-EBL: ultra-high sensitivity negative-tone electron beam resist for highly selective silicon etching and large-scale direct patterning of permanent structures

Proton beam writing a platform technology for high quality three-dimensional metal mold fabrication for nanofluidic applications

Organic solvent-free water-developable sugar resist material derived from biomass in green lithography

Contact Info

Product

Resources

About