Improving Material Quality of Polycrystalline GaN by Manipulating the Etching Time of a Porous AlN Template

Taib, M. Ikram Md; Munirah, N.; Waheeda, S.N.; Shuhaimi, Ahmad; Sabki, Syarifah Norfaezah; Zainal, N.

doi:10.1007/s11664-019-07107-8

Cited by 3 publications

(1 citation statement)

References 16 publications

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“…The introduction of voids is an effective method to improve the light-emitting efficiency (LEE) of III-nitride-based light-emitting devices (LEDs), release the stress and improve the crystal quality of III-nitride-based materials. [1][2][3][4][5][6] Many researches have reported that the LEE of III-nitride-based LEDs was increased by introducing the air voids into LED structures. For example, the LEE of an InGaN-based LED with an airvoid-embedded SiO 2 mask was enhanced by 96.8% compared to that of a conventional InGaN-based LED.…”

Section: Introductionmentioning

confidence: 99%

Introducing voids around the interlayer of AlN by high temperature annealing

et al. 2022

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To introduce voids at certain height in AlN layer by a simple method is meaningful but challenging. In this work, the AlN/sapphire template with AlN interlayer structure has been designed and grown by metal-organic chemical vapor deposition. Then the AlN template was annealed at 1700℃ for an hour to introduce the voids. It has been found that the voids were formed in the AlN layer after high temperature annealing and the positions of the voids were mainly distributed around the AlN interlayer. Meanwhile, the dislocation density of the AlN template has been decreased from 5.26×109 cm-2 to 5.10×108 cm-2. This work provides a possible method to introduce voids in AlN layer at designated height, which will benefit the design of AlN-based devices.

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Section: Introductionmentioning

confidence: 99%

Introducing voids around the interlayer of AlN by high temperature annealing

et al. 2022

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Growth and Characterization of Nonpolar Nanoporous AlN by Inward Conversion of (004) γ-LiAlO₂ Crystals

Chen,

Zhang,

Zhang

et al. 2024

Crystal Growth & Design

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In this study, an innovative nonpolar nanoporous AlN growth technology was successfully developed, which realized in situ nitrided growth of nonpolar AlN by γ-LiAlO 2 (LAO) crystals through the crystal elements expelled and recrystallization (CEER) method. In this way, we can effectively avoid the quantum-confined Stark effect by the growth of nonpolar AlN, paving the way for the fabrication of high quantum efficiency AlN-based optoelectronic devices. The prepared AlN crystalline was fully characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). The pore structure has an average pore size of about 40−50 nm, making it a great potential as a patterned substrate for epitaxial lateral overgrowth and a template for GaN-based LED devices. The rocking curve of XRD shows a full width at half-maximum (fwhm) of 0.75°, indicating relatively good crystalline quality. The phonon frequency of the E 2 (high) phonon mode in the Raman spectrum is shifted to 657.7 cm −1 , which is slightly blueshifted compared with the E 2 (high) phonon mode of the ideal AlN crystal, reflecting the slight compressive stress in the crystal structure. In addition, the AlN crystal observed by TEM has a depth of more than 4 μm, further confirming the uniformity of the crystal and the excellent three-dimensional connectivity of the pore structure. The TEM images also show that the AlN crystalline prepared by the CEER method has a lower defect density, which is conducive to greatly improving the performance of AlN-based devices. This technique enables a novel approach to synthesizing a-plane AlN, a significant advancement for the production of highquality nonpolar AlN materials and the development of nonpolar LEDs.

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Growth of freestanding GaN crystals on three-dimensional mesh porous substrates by HVPE

Wang,

Liu

et al. 2024

CrystEngComm

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Improving Material Quality of Polycrystalline GaN by Manipulating the Etching Time of a Porous AlN Template

Cited by 3 publications

References 16 publications

Introducing voids around the interlayer of AlN by high temperature annealing

Introducing voids around the interlayer of AlN by high temperature annealing

Growth and Characterization of Nonpolar Nanoporous AlN by Inward Conversion of (004) γ-LiAlO₂ Crystals

Growth of freestanding GaN crystals on three-dimensional mesh porous substrates by HVPE

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Improving Material Quality of Polycrystalline GaN by Manipulating the Etching Time of a Porous AlN Template

Cited by 3 publications

References 16 publications

Introducing voids around the interlayer of AlN by high temperature annealing

Introducing voids around the interlayer of AlN by high temperature annealing

Growth and Characterization of Nonpolar Nanoporous AlN by Inward Conversion of (004) γ-LiAlO2 Crystals

Growth of freestanding GaN crystals on three-dimensional mesh porous substrates by HVPE

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Growth and Characterization of Nonpolar Nanoporous AlN by Inward Conversion of (004) γ-LiAlO₂ Crystals