Improving memory performance of PVA:ZnO nanocomposite: The experimental and theoretical approaches

Quynh, Nhu Phuong Le Pham; Thi, Tu Uyen Doan; Tran, Khoa T.; Vu, Hoang Nam; Ta, Hanh Kieu Thi; Tran, Cao Vinh; Phan, Thắng Bách; Pham, Ngoc Kim

doi:10.1016/j.apsusc.2020.148000

Cited by 20 publications

(9 citation statements)

References 57 publications

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“…First, the OH groups that originate from PEIE may enter the ZnO lattice upon being broken from the PEIE molecules and react with the oxygen atoms of the lattice. This reaction leads to the removal of oxygen atoms from the ZnO lattice and an increase in the concentration of oxygen vacancies. , Second, upon UV irradiation, the NH groups in PEIE may react with the water molecules that are adsorbed on the surface of the ZnO film, subsequently becoming protonated and able to enter the ZnO lattice. Within the lattice, the NH groups react with oxygen atoms, thus resulting in the removal of oxygen atoms from the ZnO lattice and an increase in the concentration of oxygen vacancies …”

Section: Resultsmentioning

confidence: 99%

“…We also conducted X-ray photoelectron spectroscopy (XPS) measurements to investigate the effect PEIE modification has on the concentration of oxygen vacancies in the NAD-ZnO film. As illustrated in Figure 2c, the characteristic oxygen 1s peak of the ZnO(6-layer) multilayer film comprises three subpeaks: the first corresponds to the Zn−O bonds in the ZnO lattice (530 eV), 33 the second to the oxygen vacancies in the lattice (531 eV), 34 and the third to the C�O bonds (532 eV) 35 that originate from the organic residuals in the NAD-ZnO multilayer film. These peaks are also observed in the PEIE-modified NAD-ZnO multilayer film (Figure 2d).…”

Section: Increasing the Conductivity Of Nad-znomentioning

confidence: 99%

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Solution-Processed ZnO with Conductivity over 1000 S cm^–1 for ITO-Free Organic Photovoltaics

Pan,

Wang,

Chen

et al. 2023

ACS Appl. Mater. Interfaces

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Developing transparent conductors to replace indium tin oxide (ITO) is a critical objective in the field of organic optoelectronics. Non-atomically doped (NAD) ZnO thin films, while currently exhibiting limited conductivity, are highly promising candidates due to their unique advantages, such as having complete transparency in both the visible and near-infrared spectral regions, solution processability, and the desired surface electronic properties. In this work, the impact of surface modification by insulating polymers on the ultraviolet-enhanced conductivity of NAD-ZnO films is investigated. It was found that polymer modifiers that are rich in amino and hydroxyl groups are effective at increasing the concentration of oxygen vacancies and the conductivity of NAD-ZnO films. The highest conductivity of over 1000 S cm −1 , which is more than twice as high as the previous record for NAD-ZnO films, is achieved using polyethylenimine ethoxylated (PEIE) to modify NAD-ZnO films. Subsequently, the replacement of ITO in organic photovoltaic devices by a ZnO/ PEIE electrode is realized. The ZnO/PEIE-based OPV devices that were created exhibit performances comparable to those of ITObased devices under simulated solar illumination and performances better than those achieved with ITO-based devices under simulated indoor illumination. These results make NAD-ZnO a promising candidate for the widespread replacement of ITO in optoelectronic devices.

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Section: Resultsmentioning

confidence: 99%

Section: Increasing the Conductivity Of Nad-znomentioning

confidence: 99%

Solution-Processed ZnO with Conductivity over 1000 S cm^–1 for ITO-Free Organic Photovoltaics

Pan,

Wang,

Chen

et al. 2023

ACS Appl. Mater. Interfaces

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“…The conduction mechanisms of RRAM devices include Schottky emission, hopping conduction, ohmic conduction, Poole-Frenkel emission, space charge limited conduction (SCLC), and tunneling. [42][43][44][45][46][47][48][49][50][51][52][53][54] In our work, the linear I-V sweep curve of the Al/Ag-doped Fe 2 O 3−x /ITO device was converted into a log(V)-log (I) curve as presented in Fig. 6.…”

Section: Resultsmentioning

confidence: 99%

Improved Resistive Switching Behaviors of Al/Ag-Doped Fe₂O₃ Film/ITO Devices Fabricated with a Radio-Frequency Co-Sputtering System

Hsu,

Huang,

Huang

et al. 2023

ECS J. Solid State Sci. Technol.

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We fabricated Fe2O3−x and Ag-doped Fe2O3−x devices with resistive switching behavior by using a radiofrequency cosputtering system. Our results indicated that doping Ag into Fe2O3−x can effectively improve device performance, increasing the data retention test time to beyond 104 s and resulting in switching cycles of approximately ∼3 × 102 times; resistance on/off ratios of approximately ∼103; and mean setting and reset voltages of 0.94 V and −1.35 V, respectively. The improvement in performance had several possible reasons. In our case, conductive filament formation was mainly induced by oxygen vacancies and Ag atoms. X-ray photoelectron spectroscopy showed that oxygen vacancies increased significantly with Ag doping. This phenomenon can improve device performance. Ag atoms served as trap centers, allowing for the easy trapping and release of charges. This effect facilitated the formation of conductive filaments. Ag-doped Fe2O3−x has significant potential for application in resistive switching random access memory devices.

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“…9,10 It has been observed that when oxygen vacancy-rich ZnO nanoparticles are incorporated with poly(vinyl alcohol) (PVA) in the active layer of a resistive switching device with device structure Ag/PVA:ZnO/FTO, the operating voltage decreases significantly due to the reduction in the band gap of the active layer. 8 In another study, it was found that the memory window as well as memory performance of a polyvinylpyrrolidone (PVA)-based memory device was enhanced when ZnO nanoparticles were introduced within the active layer. 15 However, hardly any ZnO nanoparticles have been used to improve the memory performance employing organic small molecules.…”

Section: ■ Introductionmentioning

confidence: 99%

ZnO Nanoparticle-Induced Performance Enhancement of a Coumarin-Based Nonvolatile Memory Device

Deb,

Rahman,

Sarkar

et al. 2024

ACS Appl. Eng. Mater.

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Resistive switching memory devices based on organic as well as organic–inorganic hybrid materials are emerging as viable candidates for post-Moore nonvolatile memory applications. In this article, we report a nonvolatile write-once-read-many (WORM) resistive switching memory device (Al/7HNO3C/ITO) based on a coumarin derivative 7-hydroxy-N-octadecyl coumarin-3-carboxamide (7HNO3C). The device yield, retention time, read endurance, and memory window of the designed memory device were found to be 36.11%, 4 × 103 s, 1270 cycles, and ∼102, respectively. ZnO nanoparticles were synthesized and incorporated into the active layer of the coumarin-based device in order to enhance the memory performance of the device. The ZnO-incorporated device showed overall improvement in terms of device yield (83.33%), retention time (experimentally 3 × 104 s, extrapolated 10 years), read endurance (9930 cycles), and memory window (∼103) along with a significant decrease in the device-to-device variability. Moreover, density functional theory (DFT) studies and temperature-dependent measurements have revealed that charge transfer and oxygen vacancy filament formation were the key mechanisms behind such an observed memory behavior.

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Improving memory performance of PVA:ZnO nanocomposite: The experimental and theoretical approaches

Cited by 20 publications

References 57 publications

Solution-Processed ZnO with Conductivity over 1000 S cm^–1 for ITO-Free Organic Photovoltaics

Solution-Processed ZnO with Conductivity over 1000 S cm^–1 for ITO-Free Organic Photovoltaics

Improved Resistive Switching Behaviors of Al/Ag-Doped Fe₂O₃ Film/ITO Devices Fabricated with a Radio-Frequency Co-Sputtering System

ZnO Nanoparticle-Induced Performance Enhancement of a Coumarin-Based Nonvolatile Memory Device

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Improving memory performance of PVA:ZnO nanocomposite: The experimental and theoretical approaches

Cited by 20 publications

References 57 publications

Solution-Processed ZnO with Conductivity over 1000 S cm–1 for ITO-Free Organic Photovoltaics

Solution-Processed ZnO with Conductivity over 1000 S cm–1 for ITO-Free Organic Photovoltaics

Improved Resistive Switching Behaviors of Al/Ag-Doped Fe2O3 Film/ITO Devices Fabricated with a Radio-Frequency Co-Sputtering System

ZnO Nanoparticle-Induced Performance Enhancement of a Coumarin-Based Nonvolatile Memory Device

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Product

Resources

About

Solution-Processed ZnO with Conductivity over 1000 S cm^–1 for ITO-Free Organic Photovoltaics

Solution-Processed ZnO with Conductivity over 1000 S cm^–1 for ITO-Free Organic Photovoltaics

Improved Resistive Switching Behaviors of Al/Ag-Doped Fe₂O₃ Film/ITO Devices Fabricated with a Radio-Frequency Co-Sputtering System