Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment

Kim, Kwang-Eun; Jang, Jaewon

doi:10.1016/j.cap.2019.11.017

Cited by 6 publications

(2 citation statements)

References 27 publications

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“…First of all, a Shirley background subtraction was performed and peak positions were calibrated using the C 1s peak at 284.8 eV . Then, the Ga 3d peak was analyzed using four contributions: (a) the Ga 3d 5/2 (∼19.5 eV) and Ga 3d 3/2 doublets corresponding to Ga–N bonds were fitted using an energy shift of 0.45 eV and an area ratio of 2/3, (b) a single peak located at higher binding energies (∼20.7 eV) is related to Ga–O bonds, and (c) an additional contribution accounts for the O 2s peak (∼23 eV). − The Ga 3d/O 2s overlap makes the extraction of gallium oxide contribution difficult. The Ga 2p core level is not detected because of the very small sampling depth associated with this peak (∼2 nm), similar to the Al 2 O 3 thickness (nm).…”

Section: Experimental Sectionmentioning

confidence: 99%

Study of an Al₂O₃/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage V_TH

Vauche

Chanuel

Martínez

et al. 2021

ACS Appl. Electron. Mater.

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Understanding the impact of GaN surface treatment conditions on dielectric/GaN interface chemical properties is critically important for device performance. This point is under intensive research for the dielectric/GaN structure because GaN does not have a good native oxide quality such as SiO2 used in silicon technologies. The effects of different wet treatments prior to atomic layer deposition (ALD) of thin Al2O3 on Ga-polar GaN were studied by X-ray photoelectron spectroscopy (XPS). The same wet treatments have been applied to the recessed region of AlGaN/GaN heterostructures, followed by ALD of 30 nm Al2O3 in order to form MOS-channel high-electron-mobility transistors (MOSc-HEMTs) on 200 mm GaN-on-Si wafers with CMOS compatible processing. The resulting transistors exhibited a normally off behavior (threshold voltage V TH = 0.4–0.6 V) and their V TH was correlated to the oxidation at the Al2O3/GaN interface, suggesting the presence of donor defects.

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Section: Experimental Sectionmentioning

confidence: 99%

Study of an Al₂O₃/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage V_TH

Vauche

Chanuel

Martínez

et al. 2021

ACS Appl. Electron. Mater.

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“…51 Both methods are compatible with the processing of GaN and have been used to reduce the GaN surface state density and improve the performance of corresponding devices. 10,[52][53][54][55][56][57] Therefore, quantitatively measuring the effects of the two surface treatments to the surface band-bending of the GaN is of practical importance to the GaN material and device communities.…”

mentioning

confidence: 99%

Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN

Gong,

Su,

Qiu

et al. 2024

Journal of Applied Physics

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The recently demonstrated semiconductor grafting approach allows one to create an abrupt, low interface-trap-density heterojunction between a high-quality p-type single-crystalline semiconductor (non-nitrides) with n-type GaN. However, due to the surface band-bending from GaN polarization, an energy barrier exists at the grafted heterojunction, which can impact the vertical charge carrier transport. Reducing the energy barrier height is essential for some advanced device development. In this work, we employed UV/O3 and O2 plasma to treat a Ga-polar GaN surface with/without an ultrathin (∼2 nm) ALD-Al2O3 coating and studied the effects of the treatments on surface band-bending. Through XPS measurements, it was found that the treatments can suppress the upward band-bending of the Ga-polar GaN by 0.11–0.39 eV. The XPS results also showed that UV/O3 treatment is an effective surface cleaning method with little surface modification, while O2 plasma causes a strong oxidation process that occurs inside the top layer GaN.

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SAM-mediated interface engineering for enhanced Schottky diode characteristics

Mutlu,

Can,

Tozlu

2024

J Mater Sci: Mater Electron

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Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment

Cited by 6 publications

References 27 publications

Study of an Al₂O₃/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage V_TH

Study of an Al₂O₃/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage V_TH

Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN

SAM-mediated interface engineering for enhanced Schottky diode characteristics

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Improving Ni/GaN Schottky diode performance through interfacial passivation layer formed via ultraviolet/ozone treatment

Cited by 6 publications

References 27 publications

Study of an Al2O3/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage VTH

Study of an Al2O3/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage VTH

Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN

SAM-mediated interface engineering for enhanced Schottky diode characteristics

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Study of an Al₂O₃/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage V_TH

Study of an Al₂O₃/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage V_TH