Improving NV centre density during diamond growth by CVD process using N2O gas

Ngambou, Midrel Wilfried Ngandeu; Pellet-Mary, C.; Brinza, Ovidiu; Alessi, A.; Hétet, G.; Tallaire, Alexandre; Bénédic, F.; Achard, Jocelyn

doi:10.1016/j.diamond.2022.108884

Cited by 9 publications

(6 citation statements)

References 38 publications

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“…It is worth noting that our diamond absorber is the as‐fabricated layer, which no post‐treatment processes such as electron beam irradiation or high thermal annealing to increase the density of NV centers were applied. [ 40 ] The density of NV centers in the CVD diamond with an N concentration of 3.5–5.5 × 10 19 cm −3 was expected as ≈4.5 × 10 18 cm −3 . [ 27 ] Based on this assumption, the low density of NV centers limited the photocurrent of N‐doped diamond‐based PD, resulting in the obtained low R ‐value.…”

Section: Resultsmentioning

confidence: 99%

Thermally Stable and Radiation‐Proof Visible‐Light Photodetectors Made from N‐Doped Diamond

Sittimart

Ohmagari

Umezawa

et al. 2023

Advanced Optical Materials

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Due to the limits of the physical properties of conventional semiconductors against harsh environments, seeking a suitable material for next-generation photoconversion devices with high-temperature stability and strong radiation hardness has become a hot issue. Here, visible-light photodetectors are fabricated on an N-doped diamond. Their visible-light detection via charge-neutralized impurity levels including multi-complex mid-gap states induced crystal defects shows photosensitivity of at least four orders (10 4 ), the visible responsivity of 0.08 A W −1 , and the detectivity of 3.9 × 10 12 Jones. No significant deterioration of such figures of merit of photodetectors is observed even at an environmental temperature of 250 °C and after absorption to 10 MGy in the dose of white X-ray. N-doped diamond shows excellent potential to be applicable to visible-light photodetectors for harsh-environmental implementations, which conventional visible-light photodetectors are not capable of so far.

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Section: Resultsmentioning

confidence: 99%

Thermally Stable and Radiation‐Proof Visible‐Light Photodetectors Made from N‐Doped Diamond

Sittimart

Ohmagari

Umezawa

et al. 2023

Advanced Optical Materials

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“…The PL intensity is positively correlated with the NV concentration (Figure S1, Supporting Information). [24,32] By collecting and encoding the spatial distribution of the PL intensity, the CRP of the second encoding level (CRP PL ) is constructed. The randomness of the second encoding level is derived from the random distribution of the NV center concentration in microdiamonds.…”

Section: Design Of Multilevel Encoding Pufmentioning

confidence: 99%

“…[20] Various structures with independent physical properties are present in the diamond nitrogen-vacancy (NV) color center structure, which have application potential for MLE. For example, the Raman properties of the carbon-carbon single bond structure, [21][22][23] the luminescence properties of the defect structure, [24][25][26] the magnetic resonance properties of the spin structure, [24,[27][28][29] and the electron energy distribution structure [30][31][32] are all ideal coding levels that use their own physical properties. In addition, the encoding method based on spin characteristics does not depend on the physical size and spatial location distribution of the spin structure.…”

Section: Introductionmentioning

confidence: 99%

“…In addition, the encoding method based on spin characteristics does not depend on the physical size and spatial location distribution of the spin structure. [27,28] Due to the uncontrollability of color center preparation, [25,32,33] it cannot be cloned by physical structure modeling or micro-nano processing technologies. [34] Hence, it is theoretically impossible to clone.…”

Section: Introductionmentioning

confidence: 99%

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Multilevel Encoding Physically Unclonable Functions Based on The Multispecies Structure in Diamonds

Guo,

Qin,

Wang

et al. 2023

Adv Funct Materials

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The multilevel encoding (MLE) scheme is an effective method for improving the anticounterfeiting encryption capabilities of physically unclonable functions (PUFs). However, owing to the correlation between encoding layers, the encoding capacity (EC) is difficult to improve by orders of magnitude. Herein, four noncorrelated structures in the diamond crystal structure (carbon–carbon single bond, defect luminescence structures, spin structures, and electron energy distribution structures) are considered for MLE. First, the microdiamonds containing nitrogen‐vacancy (NV) color centers are embedded into polydimethylsiloxane (PDMS) to fabricate PUFs. Using an optical imaging system, four codable images of four noncorrelated structures are read. The noncorrelation of the four‐level encoding structure is verified by calculating the Hamming distance (0.496 ± 0.02). The results show that EC exponentially improves to 24×10 000/(100 pixels)2. Furthermore, the encoding method based on the energy level does not depend on physical structure parameters, such as the size and position of the spin structure. Thus, it is protected from structural modeling attacks, resulting in high security. Moreover, PUF labels based on PDMS flexible substrates can be employed for various flexible applications. In the proposed scheme, the information is encrypted by a four‐level two‐dimensional (2D) barcode and decoded by self‐developed PUF authentication software. The proposed scheme presents a way for developing next‐generation PUFs with super‐high EC.

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“…This happens after irradiation when vacancies and other defects are present in high concentrations, which implies a larger possibility that the vacancy interacts with other defects (vacancy clustering as example) instead to interact with a substitutional N atom to form the NV center. Without entering in the discussion of the model, the results are an empirical prove of the possible use of the high-temperature irradiation to introduce defects, such as NV in the negatively charged state, with a number of peculiar features that make it and the material containing it promising candidates in several application fields [47,49].…”

mentioning

confidence: 99%

Electron irradiation: From test to material tailoring

Alessi,

Cavani,

Grasset

et al. 2023

EPL

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In this article, we report some examples of how high-energy electron irradiation can be used as a tool for shaping material properties turning the generation of point-defects into an advantage beyond the presumed degradation of the properties. Such an approach is radically different from what often occurs when irradiation is used as a test for radiation hard materials or devices degradation in harsh environments. We illustrate the potential of this emerging technique by results obtained on two families of materials, namely semiconductors and superconductors.

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Improving NV centre density during diamond growth by CVD process using N2O gas

Cited by 9 publications

References 38 publications

Thermally Stable and Radiation‐Proof Visible‐Light Photodetectors Made from N‐Doped Diamond

Thermally Stable and Radiation‐Proof Visible‐Light Photodetectors Made from N‐Doped Diamond

Multilevel Encoding Physically Unclonable Functions Based on The Multispecies Structure in Diamonds

Electron irradiation: From test to material tailoring

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