Improving Quantum Well Tube Homogeneity Using Strained Nanowire Heterostructures

Abstract

Bottom-up grown nanostructures often suffer from significant dimensional inhomogeneity, and for quantum confined heterostructures, this can lead to a corresponding large variation in electronic properties. A high-throughput characterization methodology is applied to >15,000 nanoskived sections of highly strained GaAsP/GaAs radial core/shell quantum well heterostructures revealing high emission uniformity. While scanning electron microscopy shows a wide nanowire diameter spread of 540–60 +60 nm, photoluminescence reveals a tightly bounded band-to-band transition energy of 1546–3 +4 meV. A highly strained core/shell nanowire design is shown to reduce the dependence of emission on the quantum well width variation significantly more than in the unstrained case.

Pollution-free interface of 2D-MoS2/1D-CuO vdWs heterojunction for high-performance photodetector

“…One-dimensional (1D) CuO is a typical P-type metal oxide semiconductor with a band gap of 1.2-2.1 eV [12]. 1D CuO has the advantages of large surface-to-volume ratio and quantumconfined carrier transport effect, which can achieve efficient carrier separation and fast charge transport [13,14]. Therefore, 1D CuO is also regarded as a potential material for the construction of high photoresponsivity and fast response speed heterojunction photodetectors.…”