Improving Radio Frequency Transmission Properties of Graphene via Carrier Concentration Control toward High Frequency Transmission Line Applications

Yang, Jae Hyuk; Yang, Hyoung Woo; Jun, Byoung Ok; Shin, Jeong Hee; Kim, Seunguk; Jang, A‐Rang; Yoon, Seong In; Shin, Hyeon Suk; Park, Deoksoo; Park, Kyungho; Yoon, Duhee; Sohn, Jung Inn; Cha, SeungNam; Kang, Dae Joon; Jang, Jae Eun

doi:10.1002/adfm.201808057

Cited by 6 publications

(3 citation statements)

References 60 publications

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“…Another important reason for the improved electrical performance is the p-type doping effect of graphene by O 2 plasma etching process for hole pattern in the GVTFT. [40] When graphene adsorbs oxygen molecules, the oxygen molecules capture or extract electrons and cause a p-type doping effect. When the graphene was etched with O 2 plasma to create micro-holes, the perimeters of the holes were exposed to O 2 plasma.…”

Section: Micro-hole Patterning Effect To the Electrical Characteristi...mentioning

confidence: 99%

Vertical Thin Film Transistor Based on Conductivity Modulation of Graphene Electrode by Micro‐Hole Patterning

Pyo

Lee

et al. 2021

Adv Elect Materials

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The vertical thin film transistor (VTFT) has several advantages over the planar thin film transistor, such as a high current density and low operating voltage, because of the structural specificity. However, it is difficult to realize transistor operation in a VTFT because of the structural limitation that the gate field is blocked. As a solution, the conductivity modulation of a graphene electrode is studied with a micro‐hole structure as a gate field transfer electrode. The micro‐hole array pattern in the graphene allows better penetration of the gate field to junction and the work function to be modulated. Moreover, the patterning induces a doping effect on the graphene which results in a high barrier at the p–n junction and improves the conductivity in the device operation. The optimum performance is shown at 5 µm hole size and 30% hole ratio by analyzing the hole size and the area ratio. The proposed structure shows about 20 times higher on‐current than a planar transistor with a same active area. Compared to a VTFT using simple graphene working function modulation, the proposed structure has an on‐state current that is ten times higher and off‐state current that is reduced 50%, and therefore has an improved on–off ratio.

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Section: Micro-hole Patterning Effect To the Electrical Characteristi...mentioning

confidence: 99%

Vertical Thin Film Transistor Based on Conductivity Modulation of Graphene Electrode by Micro‐Hole Patterning

Pyo

Lee

et al. 2021

Adv Elect Materials

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“…[9][10][11] In addition, its impedance-matching structure mainly uses half-wavelength transmission line resonators, which are large and not easily integrated. 12,13) Therefore, a low-loss microwave probe gripper with a small size and high integration at high frequencies is urgently needed.…”

Section: Introductionmentioning

confidence: 99%

Design of low loss at high frequency and integrated scanning microwave probe gripper

Jia

Pei²,

Zhang³

et al. 2023

Jpn. J. Appl. Phys.

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We have designed a gripper for scanning microwave microscopy based on atomic force microscopy, which is optimized for impedance-matching structures and high-frequency microwave losses. The gripper is simple in structure and highly integrated. The return loss near the target operating frequency of 20 GHz is less than -30 dB, with a good -3 dB bandwidth. The minimum detected power can reach -40 dBm with a power resolution of the order of nW. Microwave scanning image of the sample surface structure was experimentally tested, showing that the gripper can be applied to microwave scanning imaging. The research results have contributed to the development of scanning microwave microscopy.

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“…However, due to the absence of band gap in graphene and its consequent inability (at the device level) to be effectively turned off, this progress has been especially notorious in the field of RF electronics. Some examples of the main advancements can be found among radio-frequency (RF) power detection applications [11], high-frequency (HF) transmission lines [12], RF low power applications [13], fifth-generation (5G) antenna arrays [14], or printed sensing applications for the Internet of Things (IoT) [15]. However, in the RF field, there are still some electronics components that indeed play an essential role in multiple communication systems embedded in radars or satellites [16]- [18], that remain unexplored.…”

Section: Introductionmentioning

confidence: 99%

A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications

et al. 2020

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We present a graphene-based phase shifter for radio-frequency (RF) phase-array applications. The core of the designed phase-shifting system consists of a graphene field-effect transistor (GFET) used in a common source amplifier configuration. The phase of the RF signal is controlled by exploiting the quantum capacitance of graphene and its dependence on the terminal transistor biases. In particular, by independently tuning the applied gate-to-source and drain-to-source biases, we observe that the phase of the signal, in the super-high frequency band, can be varied nearly 200 • with a constant gain of 2.5 dB. Additionally, if only the gate bias is used as control signal, and the drain is biased linearly dependent on the former (i.e., in a completely analogue operation), a phase shift of 85 • can be achieved making use of just one transistor and keeping a gain of 0 dB with a maximum variation of 1.3 dB. The latter design can be improved by applying a balanced branch-line configuration showing to be competitive against other state-of-the-art phase shifters. This work paves the way towards the exploitation of graphene technology to become the core of active analogue phase shifters for high-frequency operation.

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Improving Radio Frequency Transmission Properties of Graphene via Carrier Concentration Control toward High Frequency Transmission Line Applications

Cited by 6 publications

References 60 publications

Vertical Thin Film Transistor Based on Conductivity Modulation of Graphene Electrode by Micro‐Hole Patterning

Vertical Thin Film Transistor Based on Conductivity Modulation of Graphene Electrode by Micro‐Hole Patterning

Design of low loss at high frequency and integrated scanning microwave probe gripper

A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications

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