Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories

Hsiao, Yu Ping; Yang, Wen; Lin, L.; Chin, Fun Tat; Lin, Yu Hsien; Yang, Ke; Wu, Chi Chang

doi:10.1016/j.microrel.2015.08.013

Cited by 9 publications

(4 citation statements)

References 42 publications

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“…Two switching mechanisms of ReRAM devices have been proposed: valence change memory (VCM) and electrochemical metallization (ECM) [ 11 , 12 ]. For VCM-type ReRAM, oxygen vacancies in the insulator are the dominant conduction path and the metal electrode used is usually an inert metal, such as tungsten or platinum [ 13 ].…”

Section: Introductionmentioning

confidence: 99%

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

You

Lin

et al. 2018

Materials

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Electrochemical-metallization-type resistive random access memories (ReRAMs) show promising performance as next-generation nonvolatile memory. In this paper, the Cu chemical displacement technique (CDT) is used to form the bottom electrode of ReRAM devices. Compared with conventional deposition methods, the Cu-CDT method has numerous advantages for ReRAM fabrication, including low cost, low temperature fabrication, and the provision of unconsolidated Cu film and large surface roughness. Moreover, the Cu-CDT method is a favorable candidate for overcoming the Cu etching problem and is thus suitable for fabricating ReRAM devices. Using this technique, the surface morphology of a thin Cu film can be easily controlled. The obtained results show that the electric fields during the Forming and SET operations decreased, and the on-state current increased in the RESET operation, as the Cu-CDT displacement time was increased. The Cu-CDT samples exhibited a low operation field, large memory window (>106), and excellent endurance switching cycle characteristics. Moreover, this paper proposes a model to explain the electrical characteristics of ReRAM, which are dependent on the surface morphology.

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Section: Introductionmentioning

confidence: 99%

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

You

Lin

et al. 2018

Materials

Self Cite

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“…ISSN 2454-5880 3 Huang et al, 2017). With down scaling of the device, the photomemory reduces the memory window ratio due to the reduction of charge carrier traps, and the excessive erase voltage causes RC delay (Jia et al, 2019;Yin, Akey, & Jaramillo, 2018) They use PI as the resistive layer of resistive memory (Hsiao et al, 2015). The PI film is photosensitive to UV light, and its molecular structure can be changed by UV light irradiation.…”

Section: Matter: International Journal Of Science and Technologymentioning

confidence: 99%

“…Optical manipulations are non-destructive. In addition to being able to operate the device in a wide range and improve the operating efficiency, it can also improve the performance of the device (Gemayel et al, 2015;Wakayama, Hayakawa, & Seo, 2014;H. Wu et al, 2021;Zhou et al, 2017).…”

Section: Introductionmentioning

confidence: 99%

Effect of Different Uv Exposure Energy on Polyimide-Based Nonvolatile Resistive Photomemory Device

Wu,

Jiang,

et al. 2024

mijst

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Recently, many researchers pay attractive attention to organic memory technology. Polyimide film was used as the resistive switching layer of nonvolatile photomemory in this study. In order to improve the performance of the device, different wavelengths of Ultraviolet (UV) light were used to operate the device, and its impact on the polyimide film was discussed. In this paper, three different UV light bands, UVA, UVB, and UVC, are used to switch devices between low resistance state (LRS) and high resistance state (HRS). It can be seen from the results that all three kinds of energies of UV light can transform the polyimide film from HRS to LRS successfully. According to the data, after 1s of UVB irradiation, the LRS current of polyimide-based photomemory device is the largest, and the data retention ability is also the best, the second is to irradiate UVA, and the last is to irradiate UVC. The results of the optical properties and electrical properties are coincidental. Therefore, different UV energies can affect this photomemory device.

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“…The PAA polymer constituted by 260℃ imidization to form a PI film, as shown in Fig 1. [1] The structure of RRAM is composed of metal/insulator/metal (MIM) [2]. In this study, PI film is an insulating layer, and as the resistance switching layer of the RRAM, that performs resistance switching by applying energy.…”

Section: Introductionmentioning

confidence: 99%

Impact of Different PAA Solid Content Applied to Polyimide-Based Resistive Random Access Memory

Huang

Liu

Chen

et al. 2022

MSF

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This study investigated the impact of different Polyamic Acid (PAA) solid content on Polyimide (PI) film precursors, adjusting the molecular chain density after dehydration and cyclization to improve the operating voltage and leakage current of resistive random access memory (RRAM). This work modulated 1.5%, 5%, and 15% PAA solutions to form PI film as a resistance switching layer. After modulating the molecular chain density in the PI film, the goal is to improve the device’s operating characteristics. According to the result, the PI film with a higher concentration can achieve a lower operating electric field and reduce the leakage current, improving operational stability and reliability.

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Improving retention properties by thermal imidization for polyimide-based nonvolatile resistive random access memories

Cited by 9 publications

References 42 publications

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

Effect of Different Uv Exposure Energy on Polyimide-Based Nonvolatile Resistive Photomemory Device

Impact of Different PAA Solid Content Applied to Polyimide-Based Resistive Random Access Memory

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