2008
DOI: 10.1109/pesc.2008.4592292
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Improving system reliability using FRFET® in LLC resonant converters

Abstract: The trend in power converters is towards increasing power densities. In order to achieve this goal, it is necessary to reduce power losses, overall system size and weight by increasing the switching frequency. High reliability is also very important for today's switched mode power supplies. The zero-voltage-switching (ZVS) or zerocurrent-switching (ZCS) topologies that allow for high frequency switching while minimizing the switching losses are of interest. The ZVS topology operating at high frequency can impr… Show more

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Cited by 5 publications
(3 citation statements)
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“…On rectifier diodes limited to two times output voltage, low voltage stress with no regulation range, (2) At the switching loss with low turn-off current and ZVS capability in the entire load range is very low, (3) to achieve ZVS the use of all extremely important elements, and (4) zero current switching (ZCS) on secondary rectifier and low voltage stress. On rectifier diodes limited to two times output voltage, low voltage stress with no secondary inductor [29,30]. In high current, low voltage application, LLC resonant converter is widely done and also for low current, high voltage application [31].…”
Section: Introductionmentioning
confidence: 99%
“…On rectifier diodes limited to two times output voltage, low voltage stress with no regulation range, (2) At the switching loss with low turn-off current and ZVS capability in the entire load range is very low, (3) to achieve ZVS the use of all extremely important elements, and (4) zero current switching (ZCS) on secondary rectifier and low voltage stress. On rectifier diodes limited to two times output voltage, low voltage stress with no secondary inductor [29,30]. In high current, low voltage application, LLC resonant converter is widely done and also for low current, high voltage application [31].…”
Section: Introductionmentioning
confidence: 99%
“…Regarding capacitive switching, MOSFETs are more sensitive than IGBTs and can be more easily destroyed, as explained in [28] and [29]. However, during normal operation (switching above resonant frequency) some failures have been reported for ZVS converters with light loads in [30][31][32][33].…”
Section: Power Semiconductorsmentioning
confidence: 99%
“…Therefore, special care has to be taken regarding the reverse recovery time and current of the antiparallel diode in case of using MOSFETs. Authors recommend using MOSFETs with fast diodes, most of them using fastrecovery epitaxial diode field-effect transistors (FREDFET), as in [30][31][32][33][34].…”
Section: Power Semiconductorsmentioning
confidence: 99%