Improving the accuracy of junction temperature measurement with the square-root-t method

Herold, Christian; Beier, Menia; Lutz, Josef; Hensler, Alexander

doi:10.1109/therminic.2013.6675204

Cited by 14 publications

(4 citation statements)

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“…To enable a fast commutation between a large heating current and a small sense current typically in the range of 1 to 100 mA, an additional serial and parallel switch are added to the test setup. Nevertheless, there can be a short blind time with the forward voltage method, e.g., due to the recombination of charge carriers in IGBTs within the first hundreds of microseconds [27], [50], [53], [54]. A linear evolution can obtain the relevant starting temperature with the square root of time [53], [55], [56], which is a good approximation for a power density up to 300 W cm −2 .…”

Section: Junction Temperature Monitor Application With Sic Mosfetmentioning

confidence: 99%

“…Nevertheless, there can be a short blind time with the forward voltage method, e.g., due to the recombination of charge carriers in IGBTs within the first hundreds of microseconds [27], [50], [53], [54]. A linear evolution can obtain the relevant starting temperature with the square root of time [53], [55], [56], which is a good approximation for a power density up to 300 W cm −2 . Alternatively, the junction temperature can be measured with the T J -R Gi -monitor.…”

Section: Junction Temperature Monitor Application With Sic Mosfetmentioning

confidence: 99%

“…The R Gi -method enables a continuous temperature measurement during the heating and cooling phases. In contrast, the forward voltage method typically only measures cooling down phases and has a blind time of 150 µs to 1 ms after load current turn-off due to the recombination time from the high heating current to the small sense current [53]. A √ t-extrapolation has to be applied to determine the initial temperature for the forward voltage method.…”

Section: Junction Temperature Monitor Application With Sic Mosfetmentioning

confidence: 99%

See 2 more Smart Citations

Junction Temperature Measurement Based on the Internal Gate Resistance for a Wide Range of Power Semiconductors

Gleissner

Nehmer

Bakran

2023

IEEE Open J. Power Electron.

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This paper presents research results on the junction temperature measurement via the internal gate resistance in converter operation for IGBTs and its applicability to other types of active power semiconductors. A junction temperature monitor has been developed to determine the value of the temperature-dependent internal gate resistance by using a sinusoidal voltage superimposed on the gate voltage at the resonance frequency. The device enables a simple and robust junction temperature measurement in inverter operation, which is in excellent agreement with an infrared reference measurement. The method's applicability to semiconductors other than Si-IGBTs, such as SiC-MOSFETs, JFETs, and GaN devices, is verified by gate impedance measurements using a network analyzer. The gate impedance's quality factor is decisive. Other temperature-sensitive electrical parameters (TSEPs) related to the switching behavior depend on the internal gate resistance. Therefore, the findings presented are relevant for many junction temperature measurement methods.INDEX TERMS Junction temperature, semiconductor device measurements, silicon carbide devices, temperature measurement, temperature-sensitive electrical parameters, wide-band-gap devices.

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Section: Junction Temperature Monitor Application With Sic Mosfetmentioning

confidence: 99%

Section: Junction Temperature Monitor Application With Sic Mosfetmentioning

confidence: 99%

Section: Junction Temperature Monitor Application With Sic Mosfetmentioning

confidence: 99%

See 1 more Smart Citation

Junction Temperature Measurement Based on the Internal Gate Resistance for a Wide Range of Power Semiconductors

Gleissner

Nehmer

Bakran

2023

IEEE Open J. Power Electron.

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show abstract

“…Hence maximum junction temperature is underestimated. In order to improve the accuracy of maximum junction temperature estimation, a method was introduced to calculate the maximum junction temperature by a backwards extrapolation from the known measurement delay using a square root fit on the time scale proposed in [28]. This method is known to provide good and reliable readings on the maximum junction temperature and is therefore used in this work.…”

Section: Test Setupmentioning

confidence: 99%

Evaluation of the V _SD ‐method for temperature estimation during power cycling of SiC‐MOSFETs

Hoffmann

Kaminski

2019

IET Power Electronics

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An accurate temperature estimation is a substantial necessity to evaluate the outcome of a power cycling test. For devices with a forward biased pn-junction in the main current path, there is a well-known and understood method using its forward voltage drop at a small sensing current. Since metal-oxide-semiconductor field-effect transistors (MOSFETs) do not provide a pn-junction in forward mode, this method cannot be applied directly. A similar method to estimate the junction temperature of a MOSFET is the V SD (T)-method, which uses the junction of the reverse body diode. While this method is gaining wide acceptance for junction temperature estimation during power cycling of silicon carbide MOSFETs, no comprehensive investigation on its accuracy, stability and susceptibility towards degradational shift has been performed so far. In this work, the results of an investigation on the V SD (T)-method with an evaluation of its precision and suitability for temperature estimation during power cycling tests of silicon carbide MOSFETs are presented.

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Advanced Method of Pure Solder Layer Thermal Resistance Measurement in Power Cycling

Liu

Zhao

Deng

et al. 2023

2023 IEEE 6th International Electrical and Energy Conference (CIEEC)

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Improving the accuracy of junction temperature measurement with the square-root-t method

Cited by 14 publications

References 2 publications

Junction Temperature Measurement Based on the Internal Gate Resistance for a Wide Range of Power Semiconductors

Junction Temperature Measurement Based on the Internal Gate Resistance for a Wide Range of Power Semiconductors

Evaluation of the V _SD ‐method for temperature estimation during power cycling of SiC‐MOSFETs

Advanced Method of Pure Solder Layer Thermal Resistance Measurement in Power Cycling

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Improving the accuracy of junction temperature measurement with the square-root-t method

Cited by 14 publications

References 2 publications

Junction Temperature Measurement Based on the Internal Gate Resistance for a Wide Range of Power Semiconductors

Junction Temperature Measurement Based on the Internal Gate Resistance for a Wide Range of Power Semiconductors

Evaluation of the V SD ‐method for temperature estimation during power cycling of SiC‐MOSFETs

Advanced Method of Pure Solder Layer Thermal Resistance Measurement in Power Cycling

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Product

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Evaluation of the V _SD ‐method for temperature estimation during power cycling of SiC‐MOSFETs