Improving the electrical stability of a‐IGZO TFT through gate surround structures

Yu, Eun Seong; Kim, Seung Gyun; Moon, Seung Jae; Bae, Byung Seong

doi:10.1049/ell2.12977

Cited by 3 publications

(1 citation statement)

References 12 publications

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“…Based on their commercial usage, the robustness of TFT devices and their temperature, light, humidity, and bias stabilities must be ensured. Various external stresses, such as light or humidity, can be partially blocked by appropriately designing the device’s structure, as well as introducing additional layers [ 13 , 14 ]. However, blocking the bias stress in TFTs is difficult as the electrical bias applied to drive the transistors is an internal stress.…”

Section: Introductionmentioning

confidence: 99%

Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

Na,

Park,

Park

et al. 2024

Nanomaterials

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The initial electrical characteristics and bias stabilities of thin-film transistors (TFTs) are vital factors regarding the practical use of electronic devices. In this study, the dependence of positive bias stress (PBS) instability on an initial threshold voltage (VTH) and its origin were analyzed by understanding the roles of slow and fast traps in solution-processed oxide TFTs. To control the initial VTH of oxide TFTs, the indium oxide (InOx) semiconductor was doped with aluminum (Al), which functioned as a carrier suppressor. The concentration of oxygen vacancies decreased as the Al doping concentration increased, causing a positive VTH shift in the InOx TFTs. The VTH shift (∆VTH) caused by PBS increased exponentially when VTH was increased, and a distinct tendency was observed as the gate bias stress increased due to a high vertical electric field in the oxide dielectric. In addition, the recovery behavior was analyzed to reveal the influence of fast and slow traps on ∆VTH by PBS. Results revealed that the effect of the slow trap increased as the VTH moved in the positive direction; this occured because the main electron trap location moved away from the interface as the Fermi level approached the conduction band minimum. Understanding the correlation between VTH and PBS instability can contribute to optimizing the fabrication of oxide TFT-based circuits for electronic applications.

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Section: Introductionmentioning

confidence: 99%

Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

Na,

Park,

Park

et al. 2024

Nanomaterials

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Reliability analysis under bias stress and elevated temperature of dual-gate IGZO TFT

Wei,

Li,

Zhang

et al. 2024

AIP Advances

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Indium–gallium–zinc oxide (IGZO) as a star material has been broadly applied in multiple functional devices, including planar displays, flexible electronic devices, and photoelectronics. In recent years, the development of artificial intelligence and great data also extends the application of IGZO-based thin film transistors (TFTs) to memory, memristors, and neuromorphic computing. Thus, the research of high performance and reliable IGZO TFTs attracts tremendous attention worldwide. Herein, a high-quality IGZO thin film was deposited via atomic layer deposition, and a dual-gate (DG) IGZO TFT was fabricated. Comprehensive electrical characterization was conducted on the fabricated DG IGZO TFTs, revealing that DG IGZO TFTs exhibited good performance for reliability analysis. The reliability and degradation mechanism of the DG IGZO TFT was systematically investigated under bias stress at room temperature and elevated temperatures of 350, 400, and 450 K by the comprehensive electrical characterization. Results indicate that the defects of the dual gate insulators and the interfaces majorly influence the degradation under bias stresses, while the carrier scattering of the IGZO channel is the major degradation mechanism under elevated temperatures. These findings highlight the degradation mechanism of the DG IGZO TFT under bias stress and elevated temperatures from a novel viewpoint, which provides a utilizable reference to its application in circuits.

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Effect of Ga Doping on the Stability and Optoelectronic Properties of ZnSnO Thin Film Transistor

Guo,

Wang,

Wang

et al. 2024

Micromachines

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The electrical, stability and optoelectronic properties of GZTO TFTs with different Ga doping concentrations were investigated. Active layers were prepared by co-sputtering GaO and ZTO targets with different sputtering powers. The experimental results show that the surface of GZTO films is smooth, which is favorable for stability. The off-state current is reduced by a factor of 10, the switching ratio is increased to 1.59 × 108, and the threshold voltage shift is reduced in PBS and NBS tests. In addition, the transmittance of all devices is greater than 80% in the visible range, and the optical bandgap of the TFTs is increased from 3.61 eV to 3.84 eV after Ga doping. The current enhancement of the GZTO TFTs is more pronounced under UV irradiation, with higher responsiveness and better-sustained photoconductivity. It is proved that Ga doped into ZTO as a carrier suppressor can better combine with oxygen vacancies and reduce the concentration of oxygen vacancies and oxygen defects compared with Zn and Sn atoms, thus improving stability. GaO, as a wide bandgap material, can improve the optical bandgap of GZTO TFTs so that they can better absorb the light in the UV wavelength band, and they can be used in the field of UV photodetection.

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Improving the electrical stability of a‐IGZO TFT through gate surround structures

Cited by 3 publications

References 12 publications

Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

Reliability analysis under bias stress and elevated temperature of dual-gate IGZO TFT

Effect of Ga Doping on the Stability and Optoelectronic Properties of ZnSnO Thin Film Transistor

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