Improving the homogeneity and quality of InGaN/GaN quantum well exhibiting high In content under low TMIn flow and high pressure growth

Wang, Xiaowei; Liang, Feng; Zhao, Degang; Liu, Zongshun; Zhu, Jianjun; Peng, Liyuan; Yang, Jing

doi:10.1016/j.apsusc.2021.149272

Cited by 8 publications

(2 citation statements)

References 28 publications

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“…The incorporation of indium into InGaN is sensitive to several growth conditions, such as temperature, growth rate, flux of sources, pseudo-template characteristic effect, etc. [7,8]. Ammonia is an important gas source in the MOCVD-based growth of GaN-based materials; usually, an increase in the ammonia flow rate is considered to have a positive effect on indium incorporation, because a high V/III ratio is often beneficial to the incorporation of group III atoms [9,10].…”

Section: Introductionmentioning

confidence: 99%

Investigation into the MOCVD Growth and Optical Properties of InGaN/GaN Quantum Wells by Modulating NH3 Flux

et al. 2023

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In this study, the surface morphology and luminescence characteristics of InGaN/GaN multiple quantum wells were studied by applying different flow rates of ammonia during MOCVD growth, and the best growth conditions of InGaN layers for green laser diodes were explored. Different emission peak characteristics were observed in temperature-dependent photoluminescence (TDPL) examination, which showed significant structural changes in InGaN layers and in the appearance of composite structures of InGaN/GaN quantum wells and quantum-dot-like centers. It was shown that these changes are caused by several effects induced by ammonia, including both the promotion of indium corporation and corrosion from hydrogen caused by the decomposition of ammonia, as well as the decrease in the surface energy of InGaN dot-like centers. We carried out detailed research to determine ammonia’s mechanism of action during InGaN layer growth.

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Section: Introductionmentioning

confidence: 99%

Investigation into the MOCVD Growth and Optical Properties of InGaN/GaN Quantum Wells by Modulating NH3 Flux

et al. 2023

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“…On one hand, the indium incorporation is difficult at high temperature due to weak binding energy to the surface [ 6 ]. Thus, the growth temperature of InGaN well layers is normally below 800 °C [ 7 ]. But at such low temperature, the diffusion rate of gallium will be restricted strongly, leading to three-dimensional growth of GaN barrier layers and poor surface morphology of MQW region [ 8 , 9 ].…”

Section: Introductionmentioning

confidence: 99%

The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties

et al. 2021

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In this work, three GaN-based multiple quantum well (MQW) samples are grown to investigate the growth techniques of high-quality MQWs at low temperature (750 °C). Instead of conventional temperature ramp-up process, H2/NH3 gas mixture was introduced during the interruption after the growth of InGaN well layers. The influence of hydrogen flux was investigated. The cross-sectional images of MQW via transmission electron microscope show that a significant atomic rearrangement process happens during the hydrogen treatment. Both sharp interfaces of MQW and homogeneous indium distribution are achieved when a proper proportion of hydrogen was used. Moreover, the luminescence efficiency is improved strongly due to suppressed non-radiative recombination process and a better homogeneity of MQWs. Such kind of atomic rearrangement process is mainly caused by the larger diffusion rate of gallium and indium adatoms in H2/NH3 mixed gas, which leads to a lower potential barrier energy to achieve thermodynamic steady state. However, when excessive hydrogen flux is introduced, the MQW will be partly damaged, and the luminescence performance will deteriorate.

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Photoelectric characteristic of single-phase InxGa1-xN films with tunable bandgap through RF magnetron sputtering

Li,

Shen,

Zhou

et al. 2024

J Mater Sci

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Improving the homogeneity and quality of InGaN/GaN quantum well exhibiting high In content under low TMIn flow and high pressure growth

Cited by 8 publications

References 28 publications

Investigation into the MOCVD Growth and Optical Properties of InGaN/GaN Quantum Wells by Modulating NH3 Flux

Investigation into the MOCVD Growth and Optical Properties of InGaN/GaN Quantum Wells by Modulating NH3 Flux

The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties

Photoelectric characteristic of single-phase InxGa1-xN films with tunable bandgap through RF magnetron sputtering

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