Perovskite solar cells (PSCs) have increased tremendously in power conversion efficiencies (PCEs) during the short period of their existence, from 3.8% in 2009 to 25.5% currently. [1,2] PSCs are based on lead halide perovskite semiconductors, which have attracted much attention due to their outstanding optoelectronic properties, such as high absorption coefficient with a direct bandgap, which is tunable by modification of their composition, [3] long carrier diffusion length, [4] high carrier mobility, [5] and their versatile fabrication methods, including simple solution processes. [6,7] PSCs can rival with commercial monocrystalline silicon solar cells. Despite the high efficiency of PSCs, the use of hazardous solvents in preparation and the presence of the toxic element lead increase environmental concerns. To minimized adverse effects, green solvent processing [8,9] and encapsulation techniques to avoid lead leakage [10] should be applied. However, long-term stability issues still remain, limiting so far the practical commercialization of PSC technology. [11] In the conventional nÀiÀp device structure of PSCs, the metal back contact, Au (gold) or Ag (silver), give limited stability due to chemical migration of the metals and reaction with the perovskite. [12][13][14] Furthermore, these metals are expensive and need a high-vacuum deposition technique, which makes it costly and energy intensive. As an alternative, a variety of carbon materials, such as carbon black, graphite, graphene, and carbon nanotubes, are suited as contact materials in PSCs. [15,16] These carbon materials possess a work function of about 5.0 eV and allow for PSC fabrication at low temperature (<120 C). [17] In addition, carbon electrodes (CEs) offer advantages such as low cost and vacuumfree preparation, as well as giving superior stability, by acting as a moisture barrier and by suppressing ion migration. [18][19][20] There are two types of C-PSCs. Type I C-PSCs have a mesoscopic n-i-p architecture and are typically prepared by screen printing porous layers of TiO 2 , insulator (ZrO 2 , Al 2 O 3 ), and carbon, which are heated at a high temperature (≈450 C) and subsequently infiltrated with a perovskite precursor solution. Initial reports from 2013 yielded devices with a PCEs of 6.6%, [21] which improved to 17.0-17.5% in recent years. [22,23] In type II C-PSCs, the CE is deposited on the top of the perovskite layer.