Perovskite quantum dot light-emitting diodes (QLEDs)
are potential
candidates for next-generation displays due to their high color purity
and wide color gamut. Due to the strong electron-accepting ability
of poly[bis(4-phenyl) (2,4,6-trimethylphenyl) amine] (PTAA), quantum
dot (QD) films are prone to be charged, which leads to the imbalance
of charge injection and the increase of nonradiative recombination,
ultimately affecting the performance of the QLEDs. Here, we compared
and studied two polymers, poly(methyl methacrylate) (PMMA) and poly(vinyl
pyrrolidone) (PVP), as the hole interface buffer layers of QD films,
which effectively reduced the defect density, suppressed nonradiative
recombination, and greatly improved the efficiency and stability of
QLEDs. The devices with PMMA achieved a maximum external quantum efficiency
of 20.71%.