“…Perovskites can easily be deposited from their precursor solutions into a thin film by solution-based processes. − These processes are low-cost, convenient, and efficient. Nevertheless, the prepared films possess defects that cause nonradiative recombination, current–voltage hysteresis, and rapid degradation due to the low stability of the resulting devices. ,,,− The limitations can be reduced through preparation of single crystals, which possess low trap densities, higher crystallinity, and fewer ionic defects and grain boundaries, and thus the efficiency of the resulting functional devices can increase dramatically. , There are several approaches for how a single perovskite crystal can be grown: slow evaporation, inversion temperature crystallization (ITC), modified inversion temperature crystallization, antisolvent vapor assisted, top seeded solution crystal growth, bottom seeded solution crystal growth, the temperature lowering method, and the Bridgman growth method .…”