Improving the performance of power GaN-based thin-film flip-chip LEDs through a twofold roughened surface

Lin, Tseng Hsing; Wang, Shui Jinn; Tu, Yung Chun; Hung, Chien Hsiung; Yu, Tsung Hsien

doi:10.1016/j.mssp.2016.01.010

Cited by 15 publications

(6 citation statements)

References 21 publications

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“…The rings in (b) show the trend of breaking up into light spots, which indicates that the nitriding is helpful in enhancing the crystal orientation of GaN as-grown films. With increased the nitriding time, as shown in Figure 3 (c) and (d) the RHEED pattern of GaN were even exhibiting a little darker rather than clearer, which may because that after 5 min the nitriding of the substrate surface has almost completed, so with increasing the nitriding time, which may induce N-plasma etching and degrade the substrate surface morphology, there is similar to the effect of H-plasma on the cleaning of sapphire substrate [13]. …”

Section: Rheed Measurementmentioning

confidence: 73%

“…Currently, the exploitation of full-color display GaN based LED and white LED products are the research and development hot spot in global semiconductor, which also have become the most important application field. GaN based materials are mostly prepared on Sic, Si and sapphire single crystal substrates, and which have been greatly investigated for their application in LED, laser diodes (LD) and photo-detectors [6][7][8][9][10][11][12][13]. Due to wide band-gap and some excellent properties, such as good mobility, high saturated drift velocity, high mechanical and thermal stability and high transparency, and the GaN films for its alloys are also useful for fabricating high-efficiency soar cells.…”

Section: Introductionmentioning

confidence: 99%

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Effect of Nitridation Properties for High Quality GaN Deposition on Amorhpous Quartz Glass at Low Temperature via ECR-PEMOCVD

Zhang¹,

Ju²,

Li³

et al. 2017

IJCA

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GaN-based solar cells fabricating greatly depends on the using of cheap substrate and the high quality of the as-grown GaN films. The high c-axis preferred orientation GaN films were prepared on amorphous quartz glass substrate using self developed electron cyclotron resonance plasma enhanced metal-organic chemical vapor deposition (ECR-PEMOCVD) system. The properties of the GaN films were characterized by in situ Reflection High Energy Electron Diffraction (RHEED), X-ray diffraction (XRD), Transmission Spectra and photo-luminescence (PL) spectra. The results show that concentric diffraction RHEED rings demonstrated the successful nitriding of conventional amorhpous quartz glass substrates at low temperature of the 430℃, and the temperature is far below the strain point of glass. And the nitridation with as-grown GaN films deposition exhibited stronger c-axis orientation

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Section: Rheed Measurementmentioning

confidence: 73%

Section: Introductionmentioning

confidence: 99%

Effect of Nitridation Properties for High Quality GaN Deposition on Amorhpous Quartz Glass at Low Temperature via ECR-PEMOCVD

Zhang¹,

Ju²,

Li³

et al. 2017

IJCA

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show abstract

“…The p-type ohmic contact electrodes of FCLEDs should have high reflectivity and low contact resistance. To realize this, metallic and DBR mirrors can be used as highly reflective layers in flip chips owing to their high reflectance in the visible wavelength range [ 23 ]. Further, ITO was sandwiched between the reflection layer and the p-GaN to decrease the p-type contact resistance.…”

Section: Resultsmentioning

confidence: 99%

Improving the External Quantum Efficiency of High-Power GaN-Based Flip-Chip LEDs by Using Sidewall Composite Reflective Micro Structure

Fan²,

Sun

et al. 2021

Micromachines

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For high-power applications, it is important to improve the light extraction efficiency and light output of the vertical direction of LEDs. Flip-chip LEDs (FCLEDs) with an Ag/SiO2/distributed Bragg reflector/SiO2 composite reflection micro structure (CRS) were fabricated. Compared with the normal Ag-based FCLEDs, the light output power of the CRS-FCLEDs was increased by 6.3% at an operational current of 1500 mA, with the corresponding external quantum efficiency improved by 6.0%. Further investigation proved that the CRS structure exhibited higher reflectance compared with the commonly used Ag-mirror reflective structure, which originates from the increased reflective area in the sidewall and partial area of the n-GaN contact orifices. It exhibited markedly smaller optical degradation and thus higher device reliability as compared to normal Ag-based FCLED. Moreover, the light emission intensity distributions and far-field angular light emission measurements show that the CRS-FCLED has a strengthened light output in the vertical direction, which shows great potential for applications in high-power fields, such as headlamps for automobiles.

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“…The p-type ohmic contact electrodes of FCLEDs should have high reflectivity and low contact resistance. To realize this, metallic and DBR mirrors can be used as highly reflective layers in flip chips owing to their high reflectance in the visible wavelength range [18] . Further, ITO was sandwiched between the reflection layer and the p-GaN to decrease the p-type contact resistance.…”

Section: Resultsmentioning

confidence: 99%

Improving the External Quantum Efficiency of High Power GaN Based Flip-Chip LEDs using Ag/SiO2/DBR/SiO2 Composite ReflectiveStructure

Xu¹,

Zhan²,

Sun³

et al. 2021

Preprint

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Improve the light extraction efficiency and light output in the vertical direction of LEDs for high-power applications, flip-chip LEDs (FCLEDs) with an Ag/SiO2/distributed Bragg reflector/SiO2 composite reflection structure (CRS) were fabricated. The enhanced opto-electrical properties were thoroughly investigated. Compared with the normal Ag-based FCLEDs, the light output power of the CRS-FCLEDs is increased by 6.3% at an operational current of 1500 mA, with the corresponding external quantum efficiency improved by 6.0%. Further investigation proved that the CRS structure exhibited higher reflectance compared with the commonly used Ag-mirror reflective structure, which originates from the increased reflective area in the sidewall and partial area of the n-GaN contact holes. Moreover, the light emission intensity distributions and far-field angular light emission measurements show that the CRS-FCLED has a strengthened light output in the vertical direction, which shows great potential for applications in high-power fields, such as headlamps for automobiles.

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Improving the performance of power GaN-based thin-film flip-chip LEDs through a twofold roughened surface

Cited by 15 publications

References 21 publications

Effect of Nitridation Properties for High Quality GaN Deposition on Amorhpous Quartz Glass at Low Temperature via ECR-PEMOCVD

Effect of Nitridation Properties for High Quality GaN Deposition on Amorhpous Quartz Glass at Low Temperature via ECR-PEMOCVD

Improving the External Quantum Efficiency of High-Power GaN-Based Flip-Chip LEDs by Using Sidewall Composite Reflective Micro Structure

Improving the External Quantum Efficiency of High Power GaN Based Flip-Chip LEDs using Ag/SiO2/DBR/SiO2 Composite ReflectiveStructure

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