Improving the Precision of On-Wafer W-Band Scalar Load-Pull Measurements

Miller, Norman N.; Elliott, Michael; Lam, Eythan; Gilbert, Ryan; Uyeda, J.; Coffie, R.

doi:10.1109/jmw.2023.3279014

Cited by 1 publication

(1 citation statement)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, not all mm-wave GaN chips included on-wafer calibration structures. Therefore, special care was taken when analyzing measurements using different calibration algorithms as high frequency calibration is heavily affected by choice of the calibration algorithm [32], [33]. In this survey, the authors are careful not to directly compare the measurement results obtained using the two different calibration algorithms.…”

Section: Measured Resultsmentioning

confidence: 99%

A Survey of GaN HEMT Technologies for Millimeter-Wave Low Noise Applications

Miller,

Arias-Purdue,

Arkun

et al. 2023

IEEE J. Microw.

Self Cite

View full text Add to dashboard Cite

This article presents a set of measured benchmarks for the noise and gain performance of six different millimeter-wave (mm-wave) gallium nitride (GaN) high electron mobility transistor (HEMT) technologies fabricated at four different foundries in the United States. Measurements of the GaN transistors were collected on two independent noise parameter (NP) systems from 8-50 GHz and 75-110 GHz. The resulting raw NPs were stitched together to yield ultra broadband 8-110 GHz smoothed NPs. Several comparisons and summaries of the minimum noise figure and associated gain are reported for the six different GaN technologies. This work seeks to provide an initial database for noise and gain of GaN HEMTs at mm-wave frequencies to quantify progress on technology in the future.INDEX TERMS Gallium nitride (GaN), high electron mobility transistor (HEMT), noise parameters, low noise amplifier.

show abstract

Section: Measured Resultsmentioning

confidence: 99%