Improving the Response Speed of an Active-Current Controlled Field Emitter Arrays by Modifying the Controlled Current

Huang, Dan; Chen, Yicong; Wang, Chengyun; She, Juncong; Deng, Shaozhi; Chen, Jun

doi:10.1109/ted.2022.3201827

Cited by 1 publication

(1 citation statement)

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“…It is found that the response time of CNT can be down to ~100 ns [19,20], while that for individual SiC nanowire is ~1 ms [21]. For ZnO nanowire, the response time is tens of microseconds in a MOSFET controlled device [22]. Here, it should be noted that the plasma-induced electron emission [23][24][25] is not considered since it requires a pulsed voltage of more than 10 4 V, which is difficult to apply in a gated structure.…”

Section: Introductionmentioning

confidence: 99%

Modeling the Temporal Response of Gated ZnO Nanowire Field Emitter by Considering the Charging and Self-Heating Effect for Improving the Response Speed

Chen,

Wang,

Song

et al. 2024

Electronics

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ZnO nanowire is a promising candidate for large-area gated field emitter arrays. How to improve its temporal response is one of the key problems to be solved for applications. In this work, a device model for a gated ZnO nanowire field emitter with consideration of charging and self-heating effect has been established to investigate its temporal response. It is found that while the charging effect is responsible for the delay at the beginning of the pulse, the self-heating effect which induces delay due to the thermal conduction process can shorten the charging time because of its lowering of nanowire resistance. The response time can be minimized when these two effects are balanced at an optimal field which is below the critical field for thermal runaway. We further investigate the optimal response time of a nanowire with the same resistance but a different length, radius, and electrical properties. The results imply that a lower heat capacity and higher critical temperature for thermal runaway are in favor of a shorter response time, which must be taken into account in the reduction in nanowire resistance for improving response speed. All the above should be useful for the device design of a fast-response gated ZnO nanowire field emitter array.

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