Neste trabalho é descrita a construção de um microssistema em silício para retenção de íons cobre(II). Processo fotolitográfico convencional foi empregado para transferir o padrão de microcanais para o substrato de silício. Utilizando corrosão por íons reativos (RIE) com plasma de SF 6 , foram produzidos canais de 50 μm de largura e 10 μm de profundidade. Os canais foram selados com vidro de borossilicato utilizando-se a técnica de soldagem anódica. Para promover a retenção dos íons cobre(II), a superfície dos canais foi modificada através de reação de silanização com N-(β-aminoetil)-γ-aminopropiltrimetóxisilano. Os íons cobre ( This work describes the construction of a silicon microchip for retention of copper(II) metal ions. Conventional photolithographic process was applied to transfer the generated pattern to silicon wafers. Using Reactive Ion Etching (RIE), SF 6 based, channels 50 μm wide and 10 μm deep were produced. The channels were sealed with borosilicate glass using anodic bonding process. The surface of the channels were modified with N-(β-aminoethyl)-γ-aminopropyltrimetoxysilane through a silanization reaction to promote the adsorption of copper(II) ions. An amperometric detector was placed at the microchip outlet and copper(II) ions were detected by a gold electrode at 0 V (against Ag/AgCl (KCl sat.) reference electrode). Copper(II) ions were retained and eluted with HCl 50 μmol L -1 in a micro-flow system at a flow rate about 100 μL min -1 . Reproducibility in the peak area and height were about 4.6 % and 10 %, respectively, for three consecutive injections of 600 μL of 10 μmol L -1 copper(II) sample.