1986
DOI: 10.1557/proc-82-103
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Impurities in SiO2: Atomic States of Phosphorus and Arsenic

Abstract: We have studied the atomic states of arsenic (As) and phosphorus (P) in Si0 2 using X-ray photoelectron spectroscopy (XPS).Silicon dioxide implanted with As or P shows multiple XPS core level peaks corresponding to the impurity atoms located in two distinct atomic sites.The binding energies of the two arsenic 3d core levels occur at 45.8 and 42.3 eV and the two phosphorus 2p core levels occur at 134.7 and 130.3 eV.When the implanted oxides are annealed in an oxygen ambient between 900 0 C and 950 0 C, only the… Show more

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