Impurities in thin-film silicon: Influence on material properties and solar cell performance

Merdzhanova, Tsvetelina; Woerdenweber, J.; Beyer, W.; Kilper, T.; Zastrow, U.; Meier, Matthias; Stiebig, Helmut; Gordijn, A.

doi:10.1016/j.jnoncrysol.2011.11.030

Cited by 12 publications

(4 citation statements)

References 25 publications

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“…The device performance also deteriorates proportionally to their concentration. 10) Thus, it is important to reduce air concentration in the gas phase. Source materials, for example, silane and dopant gases, such as phosphine and dibolane, are highly reactive with oxygen, and they readily explode on contact with air.…”

Section: Introductionmentioning

confidence: 99%

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Development of open air silicon deposition technology by silane-free atmospheric pressure plasma enhanced chemical transport under local ambient gas control

Naito¹,

Konno²,

Yoshida³

2016

Jpn. J. Appl. Phys.

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Open air silicon deposition was performed by combining silane-free atmospheric pressure plasma-enhanced chemical transport and a newly developed local ambient gas control technology. The effect of air contamination on silicon deposition was investigated using a vacuum chamber, and the allowable air contamination level was confirmed to be 3 ppm. The capability of the local ambient gas control head was investigated numerically and experimentally. A safe and clean process environment with air contamination less than 1 ppm was achieved. Combining these technologies, a microcrystalline silicon film was deposited in open air, the properties of which were comparable to those of silicon films deposited in a vacuum chamber.

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Section: Introductionmentioning

confidence: 99%

“…A number of severe incidents have occurred with silane use. 10) Thus, compliance of strict rules and robust equipment are required. For these reasons, it is difficult to attempt silicon deposition in open air without any vacuum system by the conventional method.…”

Section: Introductionmentioning

confidence: 99%

Development of open air silicon deposition technology by silane-free atmospheric pressure plasma enhanced chemical transport under local ambient gas control

Naito¹,

Konno²,

Yoshida³

2016

Jpn. J. Appl. Phys.

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“…In the case of low O-concentrations in the material, up to 10 21 cm ¹3 (<2%), oxygen was treated as intentional or unintentional impurity in a-Si:H layers and cells. [4][5][6][7] The oxygen concentration in this range usually has little influence on the optical band gap but causes an increase in both the dark and photoconductivities, which has been speculatively explained by a doping effect of the oxygen atoms in silicon. A similar "doping" effect has been also observed in µc-Si:H materials.…”

Section: Introductionmentioning

confidence: 99%

“…A similar "doping" effect has been also observed in µc-Si:H materials. 6,8,9) It is usually observed that the incorporation of oxygen results in the degradation of cell performance in these solar cells.…”

Section: Introductionmentioning

confidence: 99%

Effects of oxygen incorporation in solar cells with a-SiO_x:H absorber layer

Wang

Smirnov

Chen

et al. 2014

Jpn. J. Appl. Phys.

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The effects of oxygen incorporation on layer properties and cell performance were investigated in thin film solar cells with a-SiOx:H absorber layers. Besides the widened optical band gap and increased defect densities, a doping effect is observed upon oxygen incorporation even for the layers with wide band gap. From comparison of solar cells illuminated from either p- or n-side, we conclude that overall hole carrier collection is strongly deteriorated by increasing the oxygen concentration. The donor-like states induced by oxygen reform the electric field in the absorber. The intensified electric field near the p/i interface improves the quantum efficiency (QE) around 400 nm, which is attributed to the better carrier collection in the p-layer. The maximum of QE shows a blue shift with both p- and n-side illumination. It is consistent with the enhanced optical band gap of the absorber layer and shows the potential of usage in multi-junction solar cells.

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Hydrogenated Microcrystalline Silicon Thin Films

Zhao

Zhang

Bai

et al. 2018

Handbook of Photovoltaic Silicon

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Impurities in thin-film silicon: Influence on material properties and solar cell performance

Cited by 12 publications

References 25 publications

Development of open air silicon deposition technology by silane-free atmospheric pressure plasma enhanced chemical transport under local ambient gas control

Development of open air silicon deposition technology by silane-free atmospheric pressure plasma enhanced chemical transport under local ambient gas control

Effects of oxygen incorporation in solar cells with a-SiO_x:H absorber layer

Hydrogenated Microcrystalline Silicon Thin Films

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Impurities in thin-film silicon: Influence on material properties and solar cell performance

Cited by 12 publications

References 25 publications

Development of open air silicon deposition technology by silane-free atmospheric pressure plasma enhanced chemical transport under local ambient gas control

Development of open air silicon deposition technology by silane-free atmospheric pressure plasma enhanced chemical transport under local ambient gas control

Effects of oxygen incorporation in solar cells with a-SiOx:H absorber layer

Hydrogenated Microcrystalline Silicon Thin Films

Contact Info

Product

Resources

About

Effects of oxygen incorporation in solar cells with a-SiO_x:H absorber layer