Comprehensive Semiconductor Science and Technology 2011
DOI: 10.1016/b978-0-44-453153-7.00049-3
|View full text |Cite
|
Sign up to set email alerts
|

Impurity Bands in Group-IV Semiconductors

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2015
2015
2021
2021

Publication Types

Select...
2
1

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 119 publications
0
1
0
Order By: Relevance
“…The initial luminescence intensity of the phosphor was that decreased to about 100 mcd afterward marginally decreased showing bright phosphorescence for more than mcd.m -2 . [17,[24][25][26]. This effect is explained by the fact that the wave functions of the electrons bound to the impurity atoms start to overlap as the density of the impurities increase instance at a doping concentration of 0.01 mol % ( 10 18 cm -3 ), the average distance between two impurities is only 10 nm.…”
Section: +mentioning
confidence: 99%
“…The initial luminescence intensity of the phosphor was that decreased to about 100 mcd afterward marginally decreased showing bright phosphorescence for more than mcd.m -2 . [17,[24][25][26]. This effect is explained by the fact that the wave functions of the electrons bound to the impurity atoms start to overlap as the density of the impurities increase instance at a doping concentration of 0.01 mol % ( 10 18 cm -3 ), the average distance between two impurities is only 10 nm.…”
Section: +mentioning
confidence: 99%