2018
DOI: 10.1016/j.physleta.2018.04.052
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Impurity-induced anisotropic semiconductor-semimetal transition in monolayer biased black phosphorus

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Cited by 25 publications
(2 citation statements)
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“…47 In this context, the analytical continuation in the complex plane is achieved by transforming iE to E + iZ. To derive EDOS, we start with the usual definition of DOS of a system, which is commonly described by DðEÞ ¼ P [48][49][50][51] with E m being the normalized eigenvalues supposed to be countable for simplicity with m counter (m = 1-5 in our system). Using the definition of the Dirac delta function dðxÞ ¼ lim…”
Section: Tight-binding Hamiltonian Modelmentioning
confidence: 99%
“…47 In this context, the analytical continuation in the complex plane is achieved by transforming iE to E + iZ. To derive EDOS, we start with the usual definition of DOS of a system, which is commonly described by DðEÞ ¼ P [48][49][50][51] with E m being the normalized eigenvalues supposed to be countable for simplicity with m counter (m = 1-5 in our system). Using the definition of the Dirac delta function dðxÞ ¼ lim…”
Section: Tight-binding Hamiltonian Modelmentioning
confidence: 99%
“…Or a uniform perpendicular electric field originating from gate voltage results in an increase of the band gap 41 . Also, an anisotropic electronic phase transition has been reported in MBP in the presence of dilute charged impurity 42 . Besides the electronic properties, due to the inherent highly dispersive electronic band structure of MBP, a large optical conductivity has been obtained in MBP 25 of which in the absorption spectra the absorption peaks for the xand y-direction take place in different optical frequencies.…”
mentioning
confidence: 95%