Impurity-Induced Raman Scattering in Sr<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">F</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>and Ba<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">F</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>

Chase, L. L.; Kühner, D.; Bron, W. E.

doi:10.1103/physrevb.7.3892

Cited by 23 publications

(2 citation statements)

References 9 publications

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“…The structure at the base of the strong FZg line is dramatically cleaned up by the application of the gate. The remaining structure is in good qualitative accord with the spectra reported by Chase et al [5] for Raman scattering induced by Eu2+ in SrF,. They found that the stronger features just above the lattice FZg line were primarily due to two-phonon scattering while the weak spectra below this line were induced by the impurity.…”

Section: Fluorescence Rejectionsupporting

confidence: 90%

The pulsed laser and gated detection in Raman spectroscopy – a survey of the spectra of common substances including studies of adsorbed benzene

Yaney

1976

J Raman Spectroscopy

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A pulsed-laser Raman spectroscopy system using a doubled Nd: YAG laser is described. Comparisons between spectra recorded using the repetitive mode (low peak power and high duty cycle) with those recorded using the burst mode (high peak power and low duty cycle) are presented showing the degree of discrimination against fluorescence and stray ambient light obtained with a gated detection system. Spectra of nylon, acrylic, benzene with acridine orange, doped SrF, crystal, and various forms of aluminum oxide and hydroxide are presented. The spectra suggest that the burst mode consistently gives, in all cases, at least a slightly improved Raman-signal-to-noise ratio with some cases showing specular improvement. The results of a preliminary analysis of the Raman spectra of benzene liquid and vapor adsorbed on aluminum oxide/hydroxide powder using the gated burst mode are also presented. Although these spectra were found to differ from that of the liquid, some tentative line identities are offered.

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Section: Fluorescence Rejectionsupporting

confidence: 90%

The pulsed laser and gated detection in Raman spectroscopy – a survey of the spectra of common substances including studies of adsorbed benzene

Yaney

1976

J Raman Spectroscopy

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“…According t o Flynn [72] the formation entropy ss of Schottky defects in alkali halides is given by EuF, 5.84 [49] 30.30 [185] 1663 [36] PbF,…”

Section: Formation Entropy Of Schottky Defects In Alkali Halidesmentioning

confidence: 99%

Formation enthalpy of schottky defects in alkali halide crystals and of anti-Frenkel defects in CaF2-type crystals

Bollmann

1980

Phys. Stat. Sol. (a)

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on the occasion of his 75th birthday The formation enthalpy hs of Schottky defects in alkali halide crystals is related to the heat L and temperature T, of fusion: hs == 8 L/NA (NA Avogadro constant) with L = (0.0352 K-l T, -11) kJ/mol. This means that the vacancy mechanism governs the melting process of alkali halides. The formation entropy $5 of Schottky defects is given by BQ = (2 to 3) s , ( 8 , entropy of fusion). The formation enthalpy ~A F of anti-Frenkel defects in MeX2 crystals of fluoritetype (Me metal; X halogen, oxygen) depends on the heat L of fusion, too: ~A F = 1.37 eV +-Die Bildungsenthalpie hs der Schottky-Defekte in Alkalihalogenidkristallen steht in direktem Zusammenhang mit der Schmelzwiirme L und der Schmelztemperatur T,: hs = 8 L / N A (NA Avogadro-Konstante) mit L = (0,0352 K-l T, -11) kJ/mol. Das bedentet, da13 das Schmel-Zen der Alkalihalogenide durch den Leerstellenmechanismus bestimmt wird. Die Bildungsentropie ss der Schottky-Defekte ist ss = (2 bis 3) s , ( 8 , Schmelzentropie). Die Bildungsenthalpie ~A B der Anti-Frenkel-Defekte in MeX,-Kristallen vom Fluorit-Typ (Me Metal1 ; X Halogen, Sauerstoff) ist ebenfalls proportional zu L: ~A F = 1,37 eV + 3,44 L / N A .-+ 3.44 L/NA.

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Raman Scattering in Thallium‐Doped Cesium Halides

Buchanan

Onari

Martin

1975

Physica Status Solidi (b)

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Impurity induced first order Raman spectra are presented for thallium doped CsCl and CsBr. The results of a Green's function calculation assuming that only nearest neighbor motion contributes to the Raman scattering are reported and compared with experiment.It is possible to separate the spectral contribution to the Raman scattering from each of the four symmetry coordinates. A reversal is found of the intensity ordering of these contributions when comparing the present results for positive impurities to previous results for negative impurities.Die defekt-induzierte Raman-Streuung erster Ordnung wird an Thallium dotiertem CsCl und CsBr gemessen. Unter der Annahme, daB nur die Bewegung der niichsten Nachbarn des Defekts zur Raman-Streuung beitriigt, wird eine Rechnung mit Hilfe Greenscher Funktionen durchgefiihrt und mit experimentellen Ergebnissen verglichen. Es ist moglich, die Beitrage jeder der vier Symmetrie-Koordinaten zum Raman-Spektrum zu isolieren. Beim Vergleich der Resultate fur positive geladene Defekte mit friiheren Resultaten fur negative Defekte wird eine Umkehrung der Reihenfolge der Intensitiiten gefunden.

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Impurity-Induced Raman Scattering in SrF2and BaF2

Cited by 23 publications

References 9 publications

The pulsed laser and gated detection in Raman spectroscopy – a survey of the spectra of common substances including studies of adsorbed benzene

The pulsed laser and gated detection in Raman spectroscopy – a survey of the spectra of common substances including studies of adsorbed benzene

Formation enthalpy of schottky defects in alkali halide crystals and of anti-Frenkel defects in CaF2-type crystals

Raman Scattering in Thallium‐Doped Cesium Halides

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