Impurity interaction with point defects in the Si–SiO2 structures and its influence on the interface properties

Kropman, D.; Mellikov, E.; Kärner, T.; Ugaste, Ü.; Laas, T.; Heinmaa, Ivo; Medvíd, A.

doi:10.1016/j.mseb.2006.07.029

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“…In this frame, the way interstitial atoms are generated in relation with the processing steps (deposition, oxidation, implantation, annealing etc.) and conditions (pressure, temperature, and process duration) [5][6][7][8], is still an open and controversial issue. This is particularly true at the stacking interfaces where little is known on the detailed chemical composition and on the interface strain distribution forming the potential reservoir of interstitial species.…”

Section: Introductionmentioning

confidence: 99%