Impurity ionization in MOSFETs at very low temperatures

Foty, D.

doi:10.1016/0011-2275(90)90207-s

Cited by 85 publications

(50 citation statements)

References 26 publications

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“…Advances in FIR technology are bringing this wavelength regime into reach 14 . Observations of the D 0 D 0 →D + D − transition for bulk doped Si:P (1.7×10 17 cm -3 ) shows a broad IR absorption peak at about 30meV 15 , which agrees with our results for F 0 = 0 given that the mean donor separation for that dopant density is about 10nm. Photo-ionisation, over a timescale T Photo can be neglected by selecting F 1 to ensure T Photo >> T Rabi .…”

supporting

confidence: 91%

Single-spin readout for buried dopant semiconductor qubits

et al. 2004

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In the design of qua ntum computer architectures that take advantage of the long coherence times of dopant nuclear and electron spins in the solid-state, singlespin detection for readout remains a crucial unsolved problem. Schemes based on adiabatically induced spin-dependent electron tunnelling between individual donor atoms, detected using a single electron transistor (SET) as an ultrasensitive electrometer, are thought to be problematic because of the low ionisaton energy of the final D − state. In this paper we analyse the adiabatic scheme in detail. We find that despite significant stabilization due to the presence of the D + , the field strengths required for the transition lead to a shortened dwell-time placing severe constraints on the SET measurement time. We therefore investigate a new method based on resonant electron transfer, which operates with much reduced field strengths. Various issues in the implementation of this method are also discussed.

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supporting

confidence: 91%

Single-spin readout for buried dopant semiconductor qubits

et al. 2004

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“…In the deep freeze out regime for very low operation temperatures (T<30K), the frozen-out impurities do not ionized enough rapidly [26]. As a result, for small electric field, the ionization by carrier emission from the trap should take an infinitely large time to occur.…”

Section: Transient Effectsmentioning

confidence: 99%

“…Three mechanisms are mainly involved in the field assisted impurity ionization at low temperature [26,27]. The first one is the well known Poole-Frenkel ionization where the emission barrier is reduced by the voltage bias.…”

Section: Transient Effectsmentioning

confidence: 99%

Characterization and Modeling of Silicon CMOS Transistor Operation at Low Temperature

Ghibaudo

1996

J. Phys. IV France

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“…In order to observe the effect of individual dopants, we need to suppress the carrier`s thermal energy. For that purpose, we lowered the At this temperature regime, most dopants are freeze-out and the density of free carriers is drastically reduced [22]. I-V A characteristics in the forward bias for pin and pn-junction devices at this temperature are shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Observation of Photovoltaic Effect and Single-photon Detection in Nanowire Silicon pn-junction

Udhiarto¹,

Purwiyanti²,

Moraru³

et al. 2013

MST

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We study nanowire silicon pin and pn-junctions at room and low temperature. Photovoltaic effects are observed for both devices at room temperature. At low temperature, nanowire pn-junction devices show their ability to detect single photon. This ability was not been observed for pin devices. Phosphorus-boron dopant cluster in the depletion region is considered to have the main role for single-photon detection capability. Fundamental mechanism of dopant-based single-photon detection in nanowire pn-junction is described in details. Abstrak Pengamatan terhadap Efek Fotovoltaik dan Deteksi Foton Tunggal pada Simpangan-pn Silikon Kawat Nano.Kami mempelajari pin dan simpangan-pn silikon pada suhu ruangan dan suhu rendah. Efek fotovoltaik diamati pada kedua komponen pada suhu ruangan. Pada suhu rendah, komponen simpangan-pn kawat nano menunjukkan kemampuan untuk mendeteksi adanya foton tunggal. Kemampuan ini tidak ditemukan pada komponen pin. Kluster dopan boron berfosfor pada daerah deplesi dianggap memainkan peranan utama dalam kemampuannya untuk mendeteksi foton. Mekanisme dasar dari deteksi foton tunggal berbasis dopant pada simpangan-pn kawat nano digambarkan secara mendetail.

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Impurity ionization in MOSFETs at very low temperatures

Cited by 85 publications

References 26 publications

Single-spin readout for buried dopant semiconductor qubits

Single-spin readout for buried dopant semiconductor qubits

Characterization and Modeling of Silicon CMOS Transistor Operation at Low Temperature

Observation of Photovoltaic Effect and Single-photon Detection in Nanowire Silicon pn-junction

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