Impurity level evolution and majority carrier-type inversion of Ag₂S under extreme compression: Experimental and theoretical approaches

Effect of Y doping on high-pressure behavior of Ag2S nanocrystals

“…14,34 Electrical transport measurements up to $19 GPa combined with rst-principles calculations showed that Ag 2 S remained semiconducting while exhibiting dramatic changes in the concentration and mobility of the majority carrier. 35 However, to the best of our knowledge, there has been no report on the effect of dopants on the highpressure behavior of Ag 2 S nanocrystals.…”

Tuning the crystal structure and electronic states ofAg2Se: Structural transitions and metallization under pressure

“…Pressure can provide another route to tune the electronic properties of Ag 2 Se. Previous high-pressure studies on Ag 2 Te [34][35][36][37] and Ag 2 S [38,39] showed they have rich phase diagrams. For Ag 2 Te, it was found that pressure effectively eliminates the LMR and alters the band structure [35], related to transitions from the insulating phase I to a semimetallic phase II, and then to a fully metallic phase III [36].…”

“…For Ag 2 Te, it was found that pressure effectively eliminates the LMR and alters the band structure [35], related to transitions from the insulating phase I to a semimetallic phase II, and then to a fully metallic phase III [36]. For Ag 2 S, several structural transitions were identified below 18 GPa [38], and a recent high-pressure study combining electrical transport measurements with electronic structure calculations showed that its band gap decreases without full closure under compression [39].…”

“…Compared to the band structure at 13 GPa (Pnma), the result at 20 GPa (Cmcm) is more broadened and contributes more density of states around the Fermi level, leading to the enhancement of metallic states. For Ag 2 Te, bulk metallic states were also obtained under high pressure [36,37], while for Ag 2 S, its band gap decreased strongly without fully closing [39]. Clearly, the effects of different chalcogenide cations need to be distinguished in order to fully understand the structural and electronic behavior.…”

Grain boundary potential and charge density at grain boundaries of chemically prepared thin silver sulfide films

“…The carrier concentration for n-type polycrystalline silver sulfide has been reported to be 2.7 Â 10 19 cm À 3 by Brüesch and Wullschleger [31]. Zhang et al [32] reported a value of carrier concentration to be 6.98 Â 10 18 cm À 3 for n-type polycrystalline Ag 2 S powder under ambient conditions. However, the doping concentration for p-type silver sulfide films is still not clearly known though the p-type conductivity has been reported in some earlier works [21,23,33].…”