Impurity measurements in silicon with D-SIMS and atom probe tomography

Ronsheim, P.; Flaitz, P.; Hatzistergos, Michael; Molella, C.; Thompson, Keith; Alvis, Roger

doi:10.1016/j.apsusc.2008.05.247

Cited by 37 publications

(23 citation statements)

References 4 publications

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“…Furthermore, since some elements are more prone to field evaporate in multi-hit events [9,[11][12][13][14][15], a similar filtering scheme can be used to enhance detection sensitivity for these elements.…”

Section: Multi-hit Eventsmentioning

confidence: 99%

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Effects of detector dead-time on quantitative analyses involving boron and multi-hit detection events in atom probe tomography

et al. 2015

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In atom probe tomography (APT), some elements tend to field evaporate preferentially in multi-hit detection events. Boron (B) is one such element. It is thought that a large fraction of the B signal may be lost during data acquisition and is not reported in the mass spectrum or in the 3-D APT reconstruction. Understanding the relationship between the field evaporation behavior of B and the limitations for detecting multi-hit events can provide insight into the signal loss mechanism for B and may suggest ways to improve B detection accuracy. The present work reports data for nominally pure B and for B-implanted silicon (Si) (NIST-SRM2137) at dose levels two-orders of magnitude lower than previously studied by Da Costa, et al. in 2012. Boron concentration profiles collected from SRM2137 specimens qualitatively confirmed a signal loss mechanism is at work in laser pulsed atom probe measurements of B in Si. Ion correlation analysis was used to graphically demonstrate that the detector dead-time results in few same isotope, same charge-state (SISCS) ion pairs being properly recorded in the multi-hit data, explaining why B is consistently under-represented in quantitative analyses. Given the important role of detector dead-time as a signal loss mechanism, the results from three different methods of estimating the detector dead-time are presented. The findings of this study apply to all quantitative analyses that involve multi-hit data, but the dead-time will have the greatest effect on the elements that have a significant quantity of ions detected in multi-hit events.

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Section: Multi-hit Eventsmentioning

confidence: 99%

“…It has been demonstrated that APT can be used to measure dopant profiles accurately in silicon (Si) with careful specimen preparation and data acquisition techniques [8,9]. However, some elements, such as boron (B), tend to field evaporate preferentially in multi-hit detection events, during APT [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Effects of detector dead-time on quantitative analyses involving boron and multi-hit detection events in atom probe tomography

et al. 2015

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“…Although the technique is established already since several decades for metallurgical applications, it has only recently gained the interest of the semiconductor industry with the advent of atom probes employing laser stimulated evaporation. Whereas some interesting applications have been reported in literature, it has become clear that the lasersemiconductor interaction is still rather poorly understood and is still required [6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Atom probe analysis of a 3D finFET with high-k metal gate

et al. 2011

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“…Such a comparison between the atom probe and SIMS was previously reported for doping profiles without any absolute depth scale. 40 It is clear that atom probe microscopy of S/D regions formed in Si isotope SLs will lead to simultaneous observation of dopant profiles with absolute depth scale of Si isotopes in the background. It has been shown in Ref.…”

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confidence: 99%

Atom probe microscopy of three-dimensional distribution of silicon isotopes in Si28∕Si30 isotope superlattices with sub-nanometer spatial resolution

Shimizu

Kawamura

Uematsu

et al. 2009

Journal of Applied Physics

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Laser-assisted atom probe microscopy of 2 nm period Si28∕Si30 isotope superlattices (SLs) is reported. Three-dimensional distributions of Si28 and Si30 stable isotopes are obtained with sub-nanometer spatial resolution. The depth resolution of the present atom probe analysis is much higher than that of secondary ion mass spectrometry (SIMS) even when SIMS is performed with a great care to reduce the artifact due to atomic mixing. Outlook of Si isotope SLs as ideal depth scales for SIMS and three-dimensional position standards for atom probe microscopy is discussed.

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Impurity measurements in silicon with D-SIMS and atom probe tomography

Cited by 37 publications

References 4 publications

Effects of detector dead-time on quantitative analyses involving boron and multi-hit detection events in atom probe tomography

Effects of detector dead-time on quantitative analyses involving boron and multi-hit detection events in atom probe tomography

Atom probe analysis of a 3D finFET with high-k metal gate

Atom probe microscopy of three-dimensional distribution of silicon isotopes in Si28∕Si30 isotope superlattices with sub-nanometer spatial resolution

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