2015
DOI: 10.1021/acsnano.5b05925
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Impurity-Mediated Early Condensation of a Charge Density Wave in an Atomic Wire Array

Abstract: We directly show how impurity atoms induce the condensation of a representative electronic phase, the charge density wave (CDW) phase, in atomic scale with scanning tunneling microscopy. Oxygen impurity atoms on the self-assembled metallic atomic wire array on a silicon crystal condense the CDW locally above the pristine transition temperature. More interestingly, the CDW along the wires is induced not by a single atomic impurity but by the cooperation of multiple impurities. First-principles calculations disc… Show more

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Cited by 14 publications
(8 citation statements)
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“…In the case of In/Si(111) it is well known that the displacement of particular atoms can have significant effects on the band structure [31,33,34] which could be partially induced by strain. In addition, strain induced by oxygen defects has been shown to modify the CDW transition [59] while strain at step edges influences the transport of electrons [60]. However calculations assuming a strain value of 1 % along the atomic chain direction (compressive or tensile) produce changes to the m 1 band position of only 100 meV, which does not account for the effect we observe and tends to rule out strain as the dominant effect.…”
Section: Excited State Mappingcontrasting
confidence: 60%
“…In the case of In/Si(111) it is well known that the displacement of particular atoms can have significant effects on the band structure [31,33,34] which could be partially induced by strain. In addition, strain induced by oxygen defects has been shown to modify the CDW transition [59] while strain at step edges influences the transport of electrons [60]. However calculations assuming a strain value of 1 % along the atomic chain direction (compressive or tensile) produce changes to the m 1 band position of only 100 meV, which does not account for the effect we observe and tends to rule out strain as the dominant effect.…”
Section: Excited State Mappingcontrasting
confidence: 60%
“…In case of Si(111)-In, e.g., the critical temperature T C for the metal insulator transition can be shifted to lower temperatures by adsorption of various atoms, which commonly destabilize the low-temperature phase. On the contrary, molecular oxygen atoms enhance cooperatively the interwire and intrawire coupling and lead to a stabilization of the insulating (8 × 2) configuration, which * tegenkamp@fkp.uni-hannover.de increases T C [12][13][14][15]. Moreover, on the Si(111)-Au (5 × 2) Si adatoms are intrinsically present and even mandatory for the formation of the geometry with the lowest (free) energy [16,17].…”
Section: Introductionmentioning
confidence: 99%
“…Self-assembled metallic nanowires on semiconductor surfaces are popular model systems to explore peculiarities of low-dimensional physics such as Peierls instabilities [1][2][3][4], Luttinger liquids [5], or solitons [6]. Gold-induced wire structures on Si(553) and Si(557) are being discussed as possible hosts for spin chains [7,8].…”
Section: Introductionmentioning
confidence: 99%