Impurity redistribution due to recrystallization of preamorphized silicon

Abstract

Fluorine-enhanced boron diffusion in germanium-preamorphized silicon J. Appl. Phys. 98, 073521 (2005); 10.1063/1.2084336Recrystallization, redistribution, and electrical activation of strained-silicon/Si 0.7 Ge 0.3 heterostructures with implanted arsenicWe have studied impurity redistribution due to low-temperature crystallization of amorphous silicon. Many impurities move ahead of the amorphous-crystalline interface and relocate closer to the surface. In general, redistribution is more likely at high impurity concentrations. By investigating a wide range of concentrations for indium, lead, and antimony, we demonstrate the direct correlation between the magnitude of this redistribution effect and the impurity metastable solubility limit in crystalline silicon. At low concentrations, it is less likely for impurities to redistribute. However, in this regime we show that indium experiences concentration-independent segregation, and that boron profiles are also affected by the crystallization process.

Millisecond flash lamp annealing of shallow implanted layers in Ge

“…The decrease of solubility and activation may be accompanied by the formation of dopant-defect clusters. 9,[17][18][19] However, in the considered samples such clusters were not found by XTEM. Therefore, it is assumed that deactivation is due to the formation of P-vacancy ͑PV͒ acceptor pairs 1 or other tiny clusters containing vacancies and dopant atoms 20 which are hardly detectable by standard XTEM.…”

“…1, 6, and 7͒ and is therefore called metastable solubility. 8,9 On the other hand, SPER during FLA ͓Figs. 1͑c͒ and 1͑d͔͒ does not show any significant snow plough effect.…”

Solid-Phase Epitaxy

“…19 Maximum equilibrium solid solubility (closed symbols)[135] and metastable solid solubility after solid-phase epitaxy (SPE) (open symbols) of common dopants in silicon (Si) and germanium (Ge). Data from Refs[128,[136][137][138][139][140]. Data from Refs[128,[136][137][138][139][140].…”

Solid-Phase Epitaxial Regrowth of Phosphorus Implanted Amorphized Germanium

“…It is clear that the regrowth in this regime is dictated by the transport (or snow plow) of the excess P peak in the amorphous layer. A similar type of dopant redistribution has been reported recently for various implanted dopants in Si [23]. A model has been proposed [24] based on a phase-field approach [25].…”