In As/GaAs quantum dot lasers with dots in an asymmetric quantum well structure

Choi, Won Jun; Song, Jin Dong; Lee, J.I.; Kim, K.C.; Kim, T.G.

doi:10.1016/j.physb.2005.12.221

Cited by 9 publications

(5 citation statements)

References 8 publications

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“…Essentially, the study of semiconductor nanostructures was inspired by the fact that the quantum-confinement effect in such lowdimensional systems allows devices with promising properties to be engineered [1][2][3][4][5][6][7][8]. For many applications, low-density droplets are required to facilitate high-quality quantum dots (QDs) with low threshold current density [9][10][11]. Nevertheless, the achievement of QDs with excellent optical properties has always presented a challenge due to the stochastic nature of self-assembled growth.…”

Section: (Some Figures In This Article Are In Colour Only In the Elec...mentioning

confidence: 99%

Composite droplets: evolution of InGa and AlGa alloys on GaAs(100)

Sablon

Wang²,

Salamo

2008

Nanotechnology

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We present a comparative study for the evolution of utilizing indium gallium (InGa) and aluminum gallium (AlGa) alloys fabricated on GaAs(100) by means of simultaneous and sequential droplet formation. The composite alloys reported using the sequential approach lack the ability to precisely determine the final alloy composition as well as consistency in the density of the droplets. Further, the composition of the InGa alloy is not uniform, as seen by the size distribution using an atomic force microscope (AFM). Although this approach may be acceptable for materials with similar surface kinetics, as in the case of AlGa, it is not acceptable for InGa. This investigation reveals that the simultaneous approach for fabricating composite alloys is the optimum approach for producing InGa alloys with better control on composition for plasmonic applications such as plasmonic waveguides.

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Section: (Some Figures In This Article Are In Colour Only In the Elec...mentioning

confidence: 99%

Composite droplets: evolution of InGa and AlGa alloys on GaAs(100)

Sablon

Wang²,

Salamo

2008

Nanotechnology

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“…Because of their potential application in optoelectronic devices such as lasers, detectors, and other novel quantum dot based devices, low-dimensional quantum dots (QDs) have attracted an increased attention [1][2][3][4]. As a result, In x Ga 1−x As/GaAs quantum dots grown on GaAs(100) substrates using the Stranski-Krastanov (SK) growth mode [5] have been extensively investigated [6][7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Observation of change in critical thickness of In droplet formation on GaAs(100)

Lee

Wang

Salamo

2007

J. Phys.: Condens. Matter

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We present a study on the formation of In droplets on GaAs(100) substrates as functions of substrate temperature and monolayer (ML) deposition by using molecular beam epitaxy (MBE) and atomic force microscopy (AFM). We specifically reveal the change in critical thickness of In deposition to form In droplets at different substrate temperatures. At a relatively high substrate temperature, the critical thickness of In droplets becomes relatively thinner as the amount of As atoms on the surface decreases. The control of the size and density of In droplets is also systematically discussed. This study provides an aid in understanding the formation of In droplets and thus can find applications in the formation of quantum structures and/or nanostructures based on droplet epitaxy.

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“…The self-assembly of semiconductor QDs has been the focus of much recent research due to the exceptional physical and optoelectronic properties of the QDs and because of their potential in novel device applications [4][5][6]. Because the optoelectronic properties of self-assembled QDs are strongly affected by their sizes, shapes, density and lateral spacing [7][8][9][10][11][12], in order to enhance the performance of the devices desired one must improve their size uniformity and lateral spacing. In QD growth based on the Stranski-Krastanov (SK) method, strain relaxation of a deposited material encourages an instantaneous transition from 2D growth into 3D growth.…”

Section: Introductionmentioning

confidence: 99%

Multiple vertically stacked quantum dot clusters with improved size homogeneity

Lee¹,

Wang

Liang³

et al. 2006

J. Phys. D: Appl. Phys.

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Structures containing multiple layers of self-assembled InAs quantum dot clusters within a GaAs matrix are investigated on GaAs (1 0 0) by atomic force microscopy. Droplet homoepitaxy (GaAs nanostructures on planar GaAs) is used to create tiny GaAs nano-mound templates elongated along [0 1 −1]. Due to a high density of monolayer steps on the edge of nano-mounds, deposited InAs prefer to form in clusters around the nano-mound templates. By varying the subsequent InAs monolayer coverages and growth temperatures, two distinctive sizes of quantum dots (QDs) are formed around the nano-mounds for the layer stacking. With a fixed GaAs barrier thickness (10 nm) in between the layers, the resulting QDs from the stacked layers show significant improvement in their size uniformity.

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In As/GaAs quantum dot lasers with dots in an asymmetric quantum well structure

Cited by 9 publications

References 8 publications

Composite droplets: evolution of InGa and AlGa alloys on GaAs(100)

Composite droplets: evolution of InGa and AlGa alloys on GaAs(100)

Observation of change in critical thickness of In droplet formation on GaAs(100)

Multiple vertically stacked quantum dot clusters with improved size homogeneity

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