In/CdTe/Au p–n junction-diode X/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" id="d1e231" altimg="si37.svg"><mml:mi>γ</mml:mi></mml:math>-ray detectors formed by frontside laser irradiation doping

Gnatyuk, V. A.

doi:10.1016/j.nima.2022.166397

Cited by 10 publications

(1 citation statement)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…(4,5) Furthermore, it has been reported that laser-doped p-n junction-type CdTe detector has a higher resolution than the Schottky-type CdTe detector, and its future development is expected. (6,7) The use of application-specific integrated circuits (ASICs) in image detectors decreases the noise and increases the energy resolution, making it possible to fabricate image detectors with high spatial resolutions. (8)(9)(10) When considering CdTe as an X-ray image detector, it is preferable to laminate CdTe and ASICs in three dimensions.…”

Section: Introductionmentioning

confidence: 99%

Resistance to Pressure in Laser-doped p–n and Schottky-type Barrier Junctions

Nishizawa,

Miyake,

Takagi

et al. 2024

Sensors and Materials

View full text Add to dashboard Cite

Cadmium telluride (CdTe) is used as an X-ray image detector for dental applications. However, it is difficult to fabricate the large CdTe chips for such applications. Therefore, it is necessary to increase the detection area by tiling. In this study, to minimize the dead space caused by bonding CdTe and application-specific integrated circuits (ASICs), the detector was three-dimensionally stacked by flip-chip bonding. Furthermore, to achieve a high spatial resolution, a diode-type detector that can apply a high electric field was used. However, in flipchip bonding, layers were stacked while applying pressure and heat; therefore, Schottky-type detectors, which are diode-type detectors, were expected to have a low breakdown voltage because the Schottky junction was located at the interface between the CdTe layer and the electrode. However, the p-n junction was expected to have a high voltage resistance because it was located inside the CdTe layer. Therefore, we performed pressure tests on Schottky-type and p-n junction CdTe detectors, and the I-V and gamma-ray spectral characteristics before and after the tests were evaluated. As expected, the Schottky-type detector stopped exhibiting diode characteristics after pressurization, the reverse current increased, and gamma rays could hardly be detected; however, the p-n junction detector maintained its diode characteristics even after pressurization, and the I-V characteristics indicated a high voltage resistance with almost no change in both the I-V and the gamma-ray spectral characteristics.

show abstract