2024 IEEE International Symposium on Systems Engineering (ISSE) 2024
DOI: 10.1109/isse63315.2024.10741096
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In-Circuit Self-Test (ICST) of Power MOS Transistors: Measuring Gate Charge as an Indicator of Oxide Stress and Device Reliability

Anil Kumar Behera,
Michael Benegiamo,
Luca Moriconi
et al.
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