In-depth characterisation of electrical carrier activation in Zn+-implanted and laser annealed InP

Dinia, A.; Zollo, Giuseppe; Pizzuto, C.; Vitali, G.; Kalitzova, M.

doi:10.1016/s0038-1098(99)00511-6

Cited by 1 publication

(2 citation statements)

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“…The electrical properties of the treated InP samples depend on the N 2 pressure in the annealing chamber and, coherently with previous experiments in air, on the laser single pulse power density [3,5]. Moreover, a correlation between the implanted Zn distribution and the surface carrier densities was evidenced by means of in-depth electrical measurements and SIMS (secondary ion mass spectroscopy) [7], thus supporting the idea of Zn activation driven by LPPLA in nitrogen atmosphere. However, the measurement of the carrier activation energy has not been attempted yet and no conclusive proof on Zn activation has been given so far.…”

Section: Introductionsupporting

confidence: 85%

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Electrical and optical characterization of a Zn-implanted InP laser annealed in a nitrogen atmosphere

Zollo¹,

Leahu²

2007

Semicond. Sci. Technol.

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Semi-insulating InP samples have been implanted with Zn in order to obtain p-type films. The implanted samples have been annealed by low-power pulsed-laser annealing in a N 2 controlled atmosphere and in a vacuum. The Hall resistance measurements show that remarkable conductivity is obtained only in the case where the annealing is performed in a N 2 atmosphere. The measured carrier activation energy evidences that the conduction is indeed due to the ionization of the implanted Zn atoms. Moreover, the mobility temperature behaviour has been used to evidence the carrier scattering mechanisms in the implanted and annealed layer. Lastly, the optical absorption coefficient of these samples has been measured by means of the photo-thermal deflection absorption technique in order to evidence the modification on the optical properties induced by the ion beam and laser irradiation.

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Section: Introductionsupporting

confidence: 85%

“…where α f and α s are the absorption coefficients of the film and the substrate respectively, L is the sample thickness (L 400 µm) and l is the film thickness (l 110-130 nm) [7].…”

Section: Resultsmentioning

confidence: 99%