In-Depth Chemical and Optoelectronic Analysis of Triple-Cation Perovskite Thin Films by Combining XPS Profiling and PL Imaging

Abstract

The investigation of chemical and optoelectronic properties of halide perovskite layers and associated interfaces is crucial to harness the full potential of perovskite solar cells. Depth-profiling photoemission spectroscopy is a primary tool to study the chemical properties of halide perovskite layers at different scales from the surface to the bulk. The technique employs ionic argon beam thinning that provides accurate layer thicknesses. However, there is an urgent need to corroborate the reliability of data on chemical properties of halide perovskite thin films to better assess their stability. The present study addresses the question of the Ar+ sputtering thinning on the surface chemical composition and the optoelectronic properties of the triple-cation mixed-halide perovskite by combining X-ray photoemission spectroscopy (XPS) and photoluminescence (PL) spectroscopy. First, XPS profiling is performed by Ar+ beam sputtering on a half-cell: glass/FTO/c-TiO2/perovskite. The resulting profiles show a very homogeneous and reproducible element distribution until near the buried interface; therefore, the layer is considered as quasihomogeneous all over its thickness, and the sputtering process is stable. Second, we evaluated a set of thinned perovskite layers representative of selected steps along the profile by means of PL imaging optical measurements in both steady-state and transient regimes to assess possible perturbation of the optical properties from the surface to bulk. Obtained PL spectra inside the resulting craters show no peak shift nor phase segregation. Accordingly, the transient PL measurements do not reveal any changes of the surface recombination rate in the sputtered areas. This demonstrates that there is no cumulative effect of sputtering nor drastic chemical and optoelectronic modifications, validating the determination of the in-depth composition of the perovskite layer. Combining XPS profiling with PL characterization can be a precise tool to be applied for an extensive study of the multiple layers and mixed organic/inorganic interfaces of photovoltaic devices.

Effect of Hole Transport Materials and Their Dopants on the Stability and Recoverability of Perovskite Solar Cells on Very Thin Substrates after 7 MeV Proton Irradiation

“…To understand the effect of proton irradiation on the HTM and HTM/perovskite interface, depth-resolved X-ray photoelectron spectroscopy (XPS) [56][57][58] was conducted on the cells with the Au electrode removed. Figure 3a-c shows the atomic ratios of fluorine to iodine as a function of depth toward the perovskite absorber in cells with PTAA(TPFB):Spiro(LiTFSI), PTAA(TPFB) and PTAA(TPFB):C8BTBT(TPFB), respectively.…”

Polymer‐Assisted Heterogeneous Lead Iodide in a Two‐Step Process: Fabrication of Efficient and Stable Perovskite Solar Cells

“…The intensity of the PL peak is effectively promoted with increasing PVA concentrations in comparison to the control film, indicating that the nonradiative recombination is undoubtedly suppressed. [ 58 ] Moreover, the redshift in the PVA‐modified perovskite film has also been verified in PL spectra. The redshift change in UV–vis and PL spectra is assumed to be originating from the interaction of PVA with electron‐donating OH groups with the Pb 2+ ions in perovskite through low‐bandgap PbO bond.…”

Enhanced Performance of CsPbIBr2 Perovskite Solar Cell by Modified Zinc Oxide Nanorods Array with [6,6]‐Phenyl C61 Butyric Acid

“…The time‐resolved PL spectra of the CsPbIBr 2 films deposited on different ETLs are shown in Figure 3b, each result is fitted through a bi‐exponential decay function. The slow decay corresponds to the radiative recombination of free carriers, while the fast one relates to defect capturing [30] . Their average value is carrier lifetime (τ ave ), [31] and the τ ave of 2.9 ns is obtained for the pristine CsPbIBr 2 film.…”

“…The slow decay corresponds to the radiative recombination of free carriers, while the fast one relates to defect capturing. [30] Their average value is carrier lifetime (τ ave ), [31] and the τ ave of 2.9 ns is obtained for the pristine CsPbIBr 2 film. In comparison, it increases to 3.8 ns when the ZnO NRs ETL is employed, and it further increases to 7.8 ns after being modified with PCBA.…”