In-depth S/TEM observation of Ti–Hf and Ta–Hf-doped Nb₃Sn layers

Abstract

In superconducting Nb3Sn layers with coherence lengths of approximately 3 nm, grain boundaries act as effective pinning sites. Thus, grain refinement is an essential issue that directly affects the superconducting critical characteristics of the Nb3Sn layer. In recent years, Hf addition to Nb3Sn wires co-doped with Ta has attracted notable interest as a method that enables grain refinement down to several tens of nm. In-depth characterization of the Nb3Sn grain morphology in Hf-doping is crucially important to correlate the microstructure with the flux pinning characteristics. In this article, the grain morphologies of Ti–Hf and Ta–Hf-doped Nb3Sn layers were clarified by scanning transmission electron microscopy (STEM) and TEM-based automated crystal orientation mapping (ACOM-TEM). STEM/energy dispersive X-ray spectroscopy (EDS) revealed no significant oxide precipitates in our samples. The grain size distribution was attained by ACOM-TEM. Although Hf-doping attained a grain refinement effect in the Nb3Sn layer in both doping cases, the degree of this effect was relatively small for Ti–Hf. Kernel average misorientation (KAM) analysis by scanning electron microscopy-electron backscatter diffraction (SEM-EBSD) unveiled no appreciable difference between the internal strain states of the Nb-alloy parent phases in Ti–Hf and Ta–Hf. One remarkable new finding through STEM/EDS was the presence of a Cu–Hf compound phase in the Nb3Sn layer. The Cu–Hf compound sounds analogous to the Cu–Ti compounds that form when Nb–47Ti with Cu matrix is heat treated. The STEM/EDS maps revealed a larger amount of Cu flow from the Cu-Sn side along the grain boundaries. The large Cu deposition on the grain boundaries might facilitate grain growth in Nb3Sn. Those findings make a novel contribution to the literature as they provide a deep insight into Nb3Sn phase formation via Hf doping.