In-die mask registration metrology for 32nm node DPT lithography

Roeth, Klaus-Dieter; Laske, Frank; Heiden, Michael; Adam, Dieter; Boesser, Artur; Rinn, Klaus; Schepp, André; Bender, Jochen

doi:10.1117/12.824282

Cited by 5 publications

(3 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Registration requirements for DPL reticles will very likely require additional metrology, including in-die measurements [1], [2] to characterize actual pattern placement performance of the litho tool within the active array. In addition, registration requirements are so tight that contributions from pellicle-induced distortions have to be considered and investigated [4] .…”

Section: Discussionmentioning

confidence: 99%

“…Another focus was set on improving the repeatability of in-die pattern placement measurements on arbitrarily shaped features. A new software solution, the Center of Gravity (CofG) algorithm, was developed and implemented [1] .…”

Section: System Softwarementioning

confidence: 99%

“…Any pattern displacement can lead to fatal CD errors on the wafer. Therefore, to ensure stable yields on DPL reticles [1], [2] the actual pattern placement performance of the litho tool should be investigated and tracked within the active array [3] .…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Update on next generation metrology tool for DPL reticles

Roeth¹,

Bender²,

Laske³

et al. 2010

SPIE Proceedings

Self Cite

View full text Add to dashboard Cite

Double Patterning Lithography (DPL) techniques for next generation wafer exposures are placing greater demand on the requirements for pattern placement accuracy on photomasks for three reasons. First, a new source of wafer overlay error results from interactions between the two masks, so the specification for each individual mask must be tightened to compensate. Second, specifications have become so tight that the distortion caused by the pellicle bending the mask has become a significant contributor to the wafer overlay error budget. Pellicle-induced distortions are particularly insidious because they are not repeatable from substrate to substrate. Third, the tightening of overlay specifications demands tighter e-beam pattern placement control throughout the die, regardless of pattern density. This makes measuring actual features in-die instead of registration test structures important.The combination of increased demand for greater pattern placement accuracy, a need to characterize the influence of pellicle distortions, and the requirement to measure actual device features drives the need for a pattern placement metrology system capable of high resolution through-pellicle in-die measurements. Key enablers of this capability include high measurement resolution, a low noise platform and a long working distance objective. This paper reports experimental results on mask features of various sizes using a next-generation pattern placement metrology system designed to meet the strict DPL requirements outlined here.

show abstract

Section: Discussionmentioning

confidence: 99%

Section: System Softwarementioning

confidence: 99%