In-die registration metrology on future-generation reticles

Roeth, Klaus-Dieter; Laske, Frank; Kinoshita, Hiroshi; Kenmochi, Daisuke; Schmidt, Karl-Heinrich; Adam, Dieter

doi:10.1117/12.813944

Cited by 5 publications

(2 citation statements)

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“…In the past it was reported already that the i-line based LMS IPRO4 system equipped with a high NA lens provides excellent results on dense line/space (L/S) pattern as small as 125nm Half Pitch (HP) as well as on dense 200nm contact hole arrays [3] . Alternatively to the high NA objective the LMS IPRO4 could be equipped with a Long Working Distance (LWD) objective of 6.9mm of free working distance to meet the requests of some mask manufacturers to investigate pellicle induced distortions and to control and improve the pelliclization process.…”

Section: Sub-components Requiring a Complete Re-designmentioning

confidence: 99%

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Update on next generation metrology tool for DPL reticles

Roeth¹,

Bender²,

Laske³

et al. 2010

SPIE Proceedings

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Double Patterning Lithography (DPL) techniques for next generation wafer exposures are placing greater demand on the requirements for pattern placement accuracy on photomasks for three reasons. First, a new source of wafer overlay error results from interactions between the two masks, so the specification for each individual mask must be tightened to compensate. Second, specifications have become so tight that the distortion caused by the pellicle bending the mask has become a significant contributor to the wafer overlay error budget. Pellicle-induced distortions are particularly insidious because they are not repeatable from substrate to substrate. Third, the tightening of overlay specifications demands tighter e-beam pattern placement control throughout the die, regardless of pattern density. This makes measuring actual features in-die instead of registration test structures important.The combination of increased demand for greater pattern placement accuracy, a need to characterize the influence of pellicle distortions, and the requirement to measure actual device features drives the need for a pattern placement metrology system capable of high resolution through-pellicle in-die measurements. Key enablers of this capability include high measurement resolution, a low noise platform and a long working distance objective. This paper reports experimental results on mask features of various sizes using a next-generation pattern placement metrology system designed to meet the strict DPL requirements outlined here.

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Section: Sub-components Requiring a Complete Re-designmentioning

confidence: 99%

“…Any pattern displacement can lead to fatal CD errors on the wafer. Therefore, to ensure stable yields on DPL reticles [1], [2] the actual pattern placement performance of the litho tool should be investigated and tracked within the active array [3] .…”

Section: Introductionmentioning

confidence: 99%