In-doped multifilled n-type skutterudites with ZT= 1.8

Rogl, Gerda; Grytsiv, A.; Yubuta, Kunio; Puchegger, S.; Bauer, E.; Raju, C.V.L.; Mallik, Ramesh Chandra; Rogl, P.

doi:10.1016/j.actamat.2015.05.024

Cited by 162 publications

(80 citation statements)

References 75 publications

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“…The resulting values are listed in Table 5. Similar values of Young's moduli of (87±2) GPa and (80±5) GPa were also obtained for Ba 4 This paper summarizes crystal structure analyses as well as the characterization of transport and mechanical properties of two novel compounds Ba 5 {V,Nb} 12 Sb 19+x . These compounds are variants of the stuffed γ-brass structure Ba 5 Ti 12 Sb 19+x .…”

Section: Mechanical Propertiessupporting

confidence: 68%

Ba₅{V,Nb}₁₂Sb_19+x, novel variants of the Ba₅Ti₁₂Sb_19+x-type: crystal structure and physical properties

Failamani

Grytsiv

Giester

et al. 2015

Phys. Chem. Chem. Phys.

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The novel compounds Ba5{V,Nb}12Sb19+x, initially found in diffusion zone experiments between Ba-filled skutterudite Ba0.3Co4Sb12 and group V transition metals (V,Nb,Ta), were synthesized via solid state reaction and were characterized by means of X-ray (single crystal and powder) diffraction, electron probe microanalysis (EPMA), and physical (transport and mechanical) properties measurements. Ba5V12Sb19.41 (a = 1.21230(1) nm, space group P4[combining overline]3m; RF(2) = 0.0189) and Ba5Nb12Sb19.14 (a = 1.24979(2) nm, space group P4[combining overline]3m; RF(2) = 0.0219) are the first representatives of the Ba5Ti12Sb19+x-type, however, in contrast to the aristotype, the structure of Ba5V12Sb19.41 shows additional atom disorder. Temperature dependent ADPs and specific heat of Ba5V12Sb19.41 confirmed the rattling behaviour of Ba1,2 and Sb7 atoms within the framework built by V and Sb atoms. Electrical resistivity of both compounds show an upturn at low temperature, and a change from p- to n-type conductivity above 300 K in Ba4.9Nb12Sb19.4. As expected from the complex crystal structure and the presence of defects and disorder, the thermal conductivity is suppressed and lattice thermal conductivity of ∼0.43 W m(-1) K(-1) is near values typical for amorphous systems. Vicker's hardness of (3.8 ± 0.1) GPa (vanadium compound) and (3.5 ± 0.2) GPa (niobium compound) are comparable to Sb-based filled skutterudites. However, the Young's moduli measured by nanoindentation for these compounds EI(Ba4.9V12Sb19.0) = (85 ± 2) GPa and EI(Ba4.9Nb12Sb19.4) = (79 ± 5) GPa are significantly smaller than those of skutterudites, which range from about 130 to 145 GPa.

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Section: Mechanical Propertiessupporting

confidence: 68%

Ba₅{V,Nb}₁₂Sb_19+x, novel variants of the Ba₅Ti₁₂Sb_19+x-type: crystal structure and physical properties

Failamani

Grytsiv

Giester

et al. 2015

Phys. Chem. Chem. Phys.

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“…All samples exhibit a Sb deficiency, which can be attributed to the annealing procedure in the synthesis. We assume that this deficiency is detrimental for the thermoelectric properties and are, together with the occurrence of arsenopyrite, the main causes of a slightly lower ZT than reported in literature . The double‐filled skutterudite shows an optimization of the thermoelectric properties due to a higher impact on the charge carrier density, high Seebeck coefficient, and concomitantly achieves the same level of thermal conductivity suppression as a comparable single‐filled skutterudite.…”

Section: Resultsmentioning

confidence: 65%

Neutron diffraction and thermoelectric properties of indium filled In_xCo₄Sb₁₂ (x = 0.05, 0.2) and indium cerium filled Ce_0.05In_0.1Co₄Sb₁₂ skutterudites

Sesselmann

Klobes

Dasgupta

et al. 2015

Physica Status Solidi (a)

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The thermoelectric properties on polycrystalline single (In) and double filled (Ce, In) skutterudites are characterized between 300 and 700 K. Powder neutron diffraction measurements of the skutterudite compositions InxCo4Sb12 (x = 0.05, 0.2) and Ce0.05In0.1Co4Sb12 as a function of temperature (12–300 K) were carried out, which gives more insight into the structural data of single and double‐filled skutterudites. Results show that due to the annealing treatment, a Sb deficiency is detectable and thus verifies defects at the Sb lattice site of the skutterudite. Furthermore, we show by electron microprobe analysis that a considerable amount of indium is lost during synthesis and post‐processing for the single indium filled samples, but not for the double cerium and indium skutterudite sample. In our experiments, the double‐filled skutterudite is superior to the single‐filled skutterudite composition due to a higher charge carrier density, a comparable lattice thermal resistivity, and a higher density of states effective mass. Furthermore, we obtained a significantly higher Einstein temperature for the double‐filled skutterudite composition in comparison to the single‐filled species, which reflects the high sensitivity due to filling of the void lattice position within the skutterudite crystal.

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“…K for half Heusler alloy [6] , zT = 1.8 at 823 K for filled Skutterudites [7] , zT = 2.2 at 915 K [8] , and polycrystalline PbTe, zT = 1.5 at 1000 K for Cu2Se [9] . Among the high-performance PGEC materials with a zT above 1 at a moderate temperature range (400-750 K), the Zn4Sb3 compound has gained special attention due to its low cost, abundant elements, and environmentally friendly processing [1,[10][11][12] .…”

Section: Introductionmentioning

confidence: 99%

In Operando Study of High‐Performance Thermoelectric Materials for Power Generation: A Case Study of β‐Zn₄sb₃

Hưng

Ngo

Han

et al. 2017

Adv Elect Materials

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To date, many high-performance thermoelectric (TE) materials for power generation have been studied and reported. However, so far they have not been implemented in reliable commercial devices. To bring current achievements into a device for power generation, a full understanding the dynamic behavior of thermoelectric materials under operating conditions is needed. In this work, an in operando study is conducted on the high-performance TE material β-Zn4Sb3 under large temperature gradient and thermal cycling by a new approach using in-situ transmission electron microscopy combined with characterization of the TE properties. We found that after 30 thermal cycles in a low-pressure helium atmosphere the TE performance of β-Zn4Sb3 is maintained with the zT value of 1.4 at 718 K. Nevertheless, under a temperature gradient of 380 K (Thot = 673 K and Tcold = 293 K) operating for only 30 hours, zinc whiskers gradually precipitate on the cold side of the β-Zn4Sb3 leg. The dynamical evolution of Zn in the matrix of β-Zn4Sb3 was found to be the source that leads to a high zT value by lowering of the thermal conductivity and electrical resistivity, but it is also the failure mechanism for the leg under these conditions. The in operando study brings deep insight into the dynamic behavior of Advanced Electronic Materials 2 nanostructured TE materials for tailoring future TE materials and devices with higher efficiency and longer durability.

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In-doped multifilled n-type skutterudites with ZT= 1.8

Cited by 162 publications

References 75 publications

Ba₅{V,Nb}₁₂Sb_19+x, novel variants of the Ba₅Ti₁₂Sb_19+x-type: crystal structure and physical properties

Ba₅{V,Nb}₁₂Sb_19+x, novel variants of the Ba₅Ti₁₂Sb_19+x-type: crystal structure and physical properties

Neutron diffraction and thermoelectric properties of indium filled In_xCo₄Sb₁₂ (x = 0.05, 0.2) and indium cerium filled Ce_0.05In_0.1Co₄Sb₁₂ skutterudites

In Operando Study of High‐Performance Thermoelectric Materials for Power Generation: A Case Study of β‐Zn₄sb₃

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In-doped multifilled n-type skutterudites with ZT= 1.8

Cited by 162 publications

References 75 publications

Ba5{V,Nb}12Sb19+x, novel variants of the Ba5Ti12Sb19+x-type: crystal structure and physical properties

Ba5{V,Nb}12Sb19+x, novel variants of the Ba5Ti12Sb19+x-type: crystal structure and physical properties

Neutron diffraction and thermoelectric properties of indium filled InxCo4Sb12 (x = 0.05, 0.2) and indium cerium filled Ce0.05In0.1Co4Sb12 skutterudites

In Operando Study of High‐Performance Thermoelectric Materials for Power Generation: A Case Study of β‐Zn4sb3

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Ba₅{V,Nb}₁₂Sb_19+x, novel variants of the Ba₅Ti₁₂Sb_19+x-type: crystal structure and physical properties

Ba₅{V,Nb}₁₂Sb_19+x, novel variants of the Ba₅Ti₁₂Sb_19+x-type: crystal structure and physical properties

Neutron diffraction and thermoelectric properties of indium filled In_xCo₄Sb₁₂ (x = 0.05, 0.2) and indium cerium filled Ce_0.05In_0.1Co₄Sb₁₂ skutterudites

In Operando Study of High‐Performance Thermoelectric Materials for Power Generation: A Case Study of β‐Zn₄sb₃