In-line metrology of nanoscale features in semiconductor manufacturing systems

Yao, Tsung Fu; Duenner, Andrew; Cullinan, Michael

doi:10.1016/j.precisioneng.2016.07.016

Cited by 34 publications

(7 citation statements)

References 14 publications

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“…SEM uses a high‐energy electron beam to illuminate the sample, so it has a far higher resolution than OM, which is widely used in semiconductor inspection. [ 6 , 7 ] However, in most cases, SEM must be used in a vacuum environment. Furthermore, it is sometimes difficult for SEM to produce a 3D topography of the sample surface.…”

Section: Introductionmentioning

confidence: 99%

Correlative AFM and Scanning Microlens Microscopy for Time‐Efficient Multiscale Imaging

Zhang

Shi

et al. 2022

Advanced Science

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With the rapid evolution of microelectronics and nanofabrication technologies, the feature sizes of large‐scale integrated circuits continue to move toward the nanoscale. There is a strong need to improve the quality and efficiency of integrated circuit inspection, but it remains a great challenge to provide both rapid imaging and circuit node‐level high‐resolution images simultaneously using a conventional microscope. This paper proposes a nondestructive, high‐throughput, multiscale correlation imaging method that combines atomic force microscopy (AFM) with microlens‐based scanning optical microscopy. In this method, a microlens is coupled to the end of the AFM cantilever and the sample‐facing side of the microlens contains a focused ion beam deposited tip which serves as the AFM scanning probe. The introduction of a microlens improves the imaging resolution of the AFM optical system, providing a 3–4× increase in optical imaging magnification while the scanning imaging throughput is improved ≈8×. The proposed method bridges the resolution gap between traditional optical imaging and AFM, achieves cross‐scale rapid imaging with micrometer to nanometer resolution, and improves the efficiency of AFM‐based large‐scale imaging and detection. Simultaneously, nanoscale‐level correlation between the acquired optical image and structure information is enabled by the method, providing a powerful tool for semiconductor device inspection.

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Section: Introductionmentioning

confidence: 99%

Correlative AFM and Scanning Microlens Microscopy for Time‐Efficient Multiscale Imaging

Zhang

Shi

et al. 2022

Advanced Science

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show abstract

“…The quick change in-line dimensional metrology system consists of three main parts: (1) a flexure stage with the AFM chips (2) a flexure-based z-axis approach mechanism, and (3) a passive wafer alignment stage as shown in Figs. 2(b)-2(d) [6]. Figure 2(e) is a flowchart showing how does this in-line metrology system works and operates.…”

Section: System Designmentioning

confidence: 99%

“…Because of the mm-scale deflection of the flexure beams, stiffness in the axial direction is affected by tangential displacement and tangential stiffness is affected by axial force [6]. That is,…”

Section: Flexure Stage Designmentioning

confidence: 99%

In-Line Dimensional Metrology in Nanomanufacturing Systems Enabled by a Passive Semiconductor Wafer Alignment Mechanism

Yao

Duenner

Cullinan

2016

Journal of Micro and Nano-Manufacturing

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One of the major challenges in nanoscale manufacturing is defect control because it is difficult to measure nanoscale features in-line with the manufacturing process. Optical inspection typically is not an option at the nanoscale level due to the diffraction limit of light, and without inspection high scrap rates can occur. Therefore, this paper presents an atomic force microscopy (AFM)-based inspection system that can be rapidly implemented in-line with other nanomanufacturing processes. Atomic force microscopy is capable of producing very high resolution (subnanometer-scale) surface topology measurements and is widely utilized in scientific and industrial applications, but has not been implemented in-line with manufacturing systems, primarily because of the large setup time typically required to take an AFM measurement. This paper introduces the design of a mechanical wafer-alignment device to enable in-line AFM metrology in nanoscale manufacturing by dramatically reducing AFM metrology setup time. The device consists of three pins that exactly constrain the wafer and a nesting force applied by a flexure to keep the wafer in contact with the pins. Kinematic couplings precisely mate the device below a flexure stage containing an array of AFM microchips which are used to make nanoscale measurements on the surface of the semiconductor wafer. This passive alignment system reduces the wafer setup time to less than 1 min and produces a lateral positioning accuracy that is on the order of ∼1 μm.

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“…The invention of the atomic force microscope (AFM) [ 1 ] provided for the observation of the nanoscale like no other tool before it [ 2 ]. The technologies derived from research into the AFM have led to developments in nanomachining [ 3 ], nanometrology [ 4 ], material science [ 5 ], semiconductor manufacturing [ 6 – 7 ] and high-density data storage systems [ 8 – 10 ].…”

Section: Introductionmentioning

confidence: 99%

Multimodal cantilevers with novel piezoelectric layer topology for sensitivity enhancement

Moore¹,

Ruppert²,

Yong³

2017

Beilstein J. Nanotechnol.

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Self-sensing techniques for atomic force microscope (AFM) cantilevers have several advantageous characteristics compared to the optical beam deflection method. The possibility of down scaling, parallelization of cantilever arrays and the absence of optical interference associated imaging artifacts have led to an increased research interest in these methods. However, for multifrequency AFM, the optimization of the transducer layout on the cantilever for higher order modes has not been addressed. To fully utilize an integrated piezoelectric transducer, this work alters the layout of the piezoelectric layer to maximize both the deflection of the cantilever and measured piezoelectric charge response for a given mode with respect to the spatial distribution of the strain. On a prototype cantilever design, significant increases in actuator and sensor sensitivities were achieved for the first four modes without any substantial increase in sensor noise. The transduction mechanism is specifically targeted at multifrequency AFM and has the potential to provide higher resolution imaging on higher order modes.

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In-line metrology of nanoscale features in semiconductor manufacturing systems

Cited by 34 publications

References 14 publications

Correlative AFM and Scanning Microlens Microscopy for Time‐Efficient Multiscale Imaging

Correlative AFM and Scanning Microlens Microscopy for Time‐Efficient Multiscale Imaging

In-Line Dimensional Metrology in Nanomanufacturing Systems Enabled by a Passive Semiconductor Wafer Alignment Mechanism

Multimodal cantilevers with novel piezoelectric layer topology for sensitivity enhancement

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