In-memory computing with resistive switching devices

As the research on artificial intelligence booms, there is broad interest in brain‐inspired computing using novel neuromorphic devices. The potential of various emerging materials and devices for neuromorphic computing has attracted extensive research efforts, leading to a large number of publications. Going forward, in order to better emulate the brain's functions, its relevant fundamentals, working mechanisms, and resultant behaviors need to be re‐visited, better understood, and connected to electronics. A systematic overview of biological and artificial neural systems is given, along with their related critical mechanisms. Recent progress in neuromorphic devices is reviewed and, more importantly, the existing challenges are highlighted to hopefully shed light on future research directions.

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Section: Artificial Neuronsmentioning

confidence: 99%

Bridging Biological and Artificial Neural Networks with Emerging Neuromorphic Devices: Fundamentals, Progress, and Challenges

et al. 2019

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“…[1][2][3][4][5] Additionally, low power consumption, fast read/write times, multibit storage, scalability down to few atoms, and complementary metal-oxide-semiconductor (CMOS) compatible low-cost production make them interesting for industrial applications. Furthermore, applications, such as selector devices, in-memory logic, or the emulation of neuromorphic functions are fully within the capabilities of this technology.…”

Section: Introductionmentioning

confidence: 99%

Active Electrode Redox Reactions and Device Behavior in ECM Type Resistive Switching Memories

Lübben

Valov

2019

Adv Elect Materials

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atoms of the active metal, electrically connecting both electrodes through the solid electrolyte. [11] The formation of this filament is preceded by (partial) oxidation of the active electrode under positive bias. Because of field accelerated transport, the so-formed cations are migrating through the solid electrolyte thin film (e.g., Ta 2 O 5 , HfO 2 , or SiO 2 ) toward the counter electrode. The cations are reduced at the negatively charged counter electrode and form a nucleus facilitating further fast filament growth. Filament growth continues until short circuit conditions are reached and the driving forces for the electrochemical redox processes and ion migration are diminished. The transition from the high resistive state (HRS) into a low resistive state (LRS) is the SET process. When a negative bias is applied to the active electrode, the filament is disrupted and driven by same forces, but in opposite direction it is assumed to be completely dissolved. The device is switched from LRS to HRS that is the RESET.Since electrochemical electrode processes are spatially separated, SET event requires a counter electrode reaction at the CE to keep overall electroneutrality of the system. For most oxide-based solid electrolytes, this counter reaction involves a reduction of moisture, incorporated in the films from the ambient or during preparation steps (e.g., lithography, rinsing, atomic layer deposition (ALD) deposition, etc.). Reduction of water is kinetically favorable compared to reduction (and decomposition) of the oxide itself [12] and therefore the redox processes related to moisture can be a limiting factor for the switching kinetics. [13] Furthermore, incorporated moisture can also enhance the cation mobility. [14] In ECM devices, typically silver or copper electrodes are used. In addition, metals such as Ti [15] or alloys/compounds have been suggested as active electrodes. [16,17] The advantage of these alternative systems is considered to be the direct supply of mobile ions, avoiding the necessity of direct electrode oxidation and related energy consumption. However, in most of the cases the choice of active electrode materials is based mainly on empirical observations and the electrochemical properties of the materials toward oxidation and reduction have not been considered.In this work, we investigate the electrochemical redox behavior of several metals covering a range from noble to transition metals (Ag, Al, Au, Cu, Fe, Ni, Ta Ti, V, and Zr) as active electrode materials using Me/SiO 2 /Pt system. Cyclic voltammetry (CV) measurements are used to provide information on the redox processes occurring prior to the switching events. In addition, we performed I-V switching experiments with three different thicknesses of the solid electrolyte down to 5 nm Electrochemical metallization cells rely on oxidation, reduction, and migration of metal cations in nanoscale thin films. The cations are typically provided by the oxidation of the active electrode. Commonly, Cu, Ag, or their compounds are used as electro...

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“…[56][57][58] The reversible switching of the phase and the accompanying optical and electrical property change were first reported by Ovshinsky in 1968, but the focus then was on the optical property change. [5,60] In this regard, such a return of Intel to the memory business may have been a natural consequence of its stagnant central processing unit (CPU) business, but the conventional DRAM and NAND flash markets are dominated by the companies in South Korea and Japan. This is a natural consequence of the recent change in the semiconductor market trend.…”

Section: D-integrated Pcram-3d Xpointmentioning

confidence: 99%

What Will Come After V‐NAND—Vertical Resistive Switching Memory?

Yoon

Kim

Hwang

2019

Adv Elect Materials

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The NAND flash memory serves as the key enabler of the flourishing of portable handheld information devices, such as the cellular phone. The recent upsurge in the sales of vertical NAND flash memory (V‐NAND) entails a further increase in the available information capacity at the edge devices and the servers with higher performance and lower power consumption compared with the magnetic hard‐disc drives. Nonetheless, there will certainly be an upper limit for the number of stacked layers, which will be the point at which further memory density increase will stop. While V‐NAND is a supreme outcome of semiconductor memory technologies, it still relies on conventional Si‐based materials. The newly explored memory materials and concepts, such as the resistance‐based memories, can therefore be an appealing contender to or successor of V‐NAND. In this review, the current state of V‐NAND is first briefly looked into, and then the eventual limitation of memory density increase and performance boost are discussed. Most importantly, the possible strategies of integrating the resistance‐based memories into the vertical architecture are then discussed. Finally, the outlook for such resistance‐based vertical memories is presented.

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In-memory computing with resistive switching devices

Cited by 1,616 publications

References 100 publications

Bridging Biological and Artificial Neural Networks with Emerging Neuromorphic Devices: Fundamentals, Progress, and Challenges

Bridging Biological and Artificial Neural Networks with Emerging Neuromorphic Devices: Fundamentals, Progress, and Challenges

Active Electrode Redox Reactions and Device Behavior in ECM Type Resistive Switching Memories

What Will Come After V‐NAND—Vertical Resistive Switching Memory?

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