2022
DOI: 10.1109/led.2022.3179736
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In-Memory Search With Phase Change Device-Based Ternary Content Addressable Memory

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Cited by 10 publications
(3 citation statements)
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“…Device parameters are based on PCM devices, whose structure, characteristics, and electrical performance are described in ref. [18].…”
Section: Methodsmentioning
confidence: 99%
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“…Device parameters are based on PCM devices, whose structure, characteristics, and electrical performance are described in ref. [18].…”
Section: Methodsmentioning
confidence: 99%
“…Compared to other nonvolatile CAMs, the 2R structure shows significant advantages in search energy and cell area, as shown in Table S1, Supporting Information. In the circuit, each CAM consists of two PCM devices [ 18 ] ( R 0 and R 1 ), whose connection point is connected to the match line (ML), and both ends are controlled by two complementary search lines (SL and SLB). The CAM is equivalent to an XOR gate, whose output result “0”/”1” (that is, “match”/“mismatch”) is mapped into low/high voltage in ML.…”
Section: R Content Addressable Memorymentioning
confidence: 99%
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