(In,Mn)As multilayer quantum dot structures

Abstract

Influences of the spacer layer growth temperature on multilayer InAs ∕ GaAs quantum dot structures Size, density, and shape of InAs quantum dots in closely stacked multilayers grown by the Stranski-Krastanow mode J.

Electronic structure of (In,Mn)As quantum dots buried in GaAs investigated by soft-x-ray ARPES

“…The (In,Mn)As QDs were grown on semiinsulating GaAs(001) wafers. Their growth procedure used the method developed in [13,14] which is based on selective doping of QDs during their formation (for details of the growth protocol as well as morphological properties of our samples see the supplementary). Differently from the conventional techniques, the shutter of the Mn cell was opened only over certain time intervals instead of the entire growth of QDs.…”

“…With the atomic concentration of Mn within the grown QDs on a level of a few tenths of percent, their FM properties can potentially be formed through quantum confinement in these low-dimensionality systems. Such a low atomic concentration and the selective doping growth method aimed, in particular, at suppression of any precipitate phases [13,14]. After the formation of the QD layer, the sample was covered by a composite capping layer, figure 1(a), including:…”

“…SQUID characterization of the magnetic properties of our samples was below the detection limit of this technique because of very small volume concentration of Mn atoms compared to the GaAs bulk. More detailed information on growth and characterization of our (In,Mn)As QDs samples can be found in [13,14].…”

Growth and properties of self‐catalyzed (In,Mn)As nanowires

“…This brings up many questions concerning the formation of nanostructures, especially nanowires and quantum dots based on so called diluted magnetic semiconductors (DMS). Unlike DMS layers, which grow usually at relatively low temperatures to avoid phase separations, nanostructures can be formed at higher temperature range . Furthermore, as it was already mentioned, the elongated shape of DMS nanowires provides unique opportunities to control their magnetic properties, e.g.…”

(In,Mn)As квантовые точки: синтез и оптические свойства

“…Известно, что обычно тонкие пленки РМП соединений синтезируют при относительно низких ростовых температурах для того, чтобы избежать образования вторичных фаз. В свою очередь, нами были разработали новые методы для синтеза с помощью молекулярно-пучковой эпитаксии (МПЭ) (In,Mn) As квантовых точек [4,5] и нитевидных нанокристаллов [6] при относительно высоких температурах роста. При этом, МПЭ синтез (In,Mn)As квантовых точек основывался на селективном легировании Mn центральных частей квантовых точек.…”