In-plane charged domain walls with memristive behaviour in a ferroelectric film

Emergent Ferroelectric Switching Behavior from Polar Vortex Lattice

“…While there is clearly more work needed to functionalize this behavior, this confinement‐based approach may be applicable to other ferroelectric systems where one can use the discrete motion of confined domain walls to generate emergent switching behavior. [ 34 ] Additionally, the importance of the vortex ordering in its novel properties and functionalities should lead to interest in the ordering of other polar topological defects such as merons and skyrmions.…”

Memristor-based neural networks: a bridge from device to artificial intelligence

“…Liu et al demonstrated a BiFeO 3 ferroelectric thin film of several-nanometer thickness for manipulating in-plane charged domain walls. 135 The voltage control of the domain wall position in the BiFeO 3 plane produced multiple nonvolatile resistance states in the W/SrRuO 3 /BiFeO 3 /SrRuO 3 / Nb-SrTiO 3 ferroelectric memristor, thus realizing the key functional characteristics of a memristor with several unit-cell thickness. This promotes a better understanding of ferroelectric switches and provides a new strategy for creating unit-cell-scale devices.…”

Neuromorphic functionality of ferroelectric domain walls

“…Wall's conduction behaviour was tuned between the resistive and conducting state in a hysteretic manner, although the magnitude of the observed conductivity was low. Lately using an in situ biasing technique within a scanning transmission electron microscope [86], an unconventional layer-by-layer switching behaviour, leading to multiple unique conductance states, was detected in which domain growth occurred along the direction of the applied electric field. Tunable electronic properties can be achieved not just at the level of a wall but can be leveraged to build and realize multi-level solid states memory and electronic devices.…”