In-plane electrical bistability of photochromic diarylethene/Cu composite film

Tsujioka, Tsuyoshi; Nobunaga, Masaki; Dohi, Megumi

doi:10.1016/j.orgel.2015.07.039

Cited by 4 publications

(2 citation statements)

References 25 publications

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“…This part can be divided into four regions including the first LRS (region A, 0 V to −0.9 V), the second LRS (region B, −1 V to −4.6 V), the transition region from low-resistance state to high-resistance state (region C, −4.7 V to −6 V) and the high-resistance state (region D, −6 V to −2 V). For region A, the result shows the relationship between I and V fits to ln I ∼ V 1/2 with the slope value of 1, which corresponds to the type of thermionic emission [30,31]. According to the energy level structure, the high barrier between the LUMO energy level of PVDF and ITO makes the electron injection difficult at the low voltage from 0 V to −0.9 V. For region B, the fitting curve satisfies the relationship of ln I ∼ lnV with the slope of 1.96, which corresponds to the type of space charge limited current (SCLC) mechanism [12,32].…”

Section: Resultsmentioning

confidence: 90%

Existence of ferroelectric resistive switching memory in MoS₂/PVDF heterojunction devices

Liu¹,

Yang²,

Li³

2021

J. Phys. D: Appl. Phys.

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The heterostructure device based on polyvinylidene fluoride (PVDF)/MoS2 films was succesfully prepared and showed a good hysteresis feature with a unique resistive switching perpromance, where the logarithmic I–V curve looks like a butterfly. The on-off ratio for the resistive switching in the device based on PVDF/MoS2 films reaches 2.5 × 102 and the resistive switching happens at −0.9 V and −4.9 V for a half loop. The influence of the introduction of MoS2 and ferroelectric PVDF film was also studied and compared to a device based on a single film. The underlying physical mechanism for the unique resistive transition was attributed to the polarization field from the ferroelectric polymer PVDF and the S vacancies in MoS2.

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Section: Resultsmentioning

confidence: 90%

Existence of ferroelectric resistive switching memory in MoS₂/PVDF heterojunction devices

Liu¹,

Yang²,

Li³

2021

J. Phys. D: Appl. Phys.

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“…We found that the noble metal‐vapor deposition modulation on the DAE1 films exhibits a unique electrical property. Figure shows the in‐plane electrical bistability of DAE1/Cu composite films prepared by vacuum deposition of Cu onto DAE1 surfaces . Very large ON‐OFF ratios of 10 4 −10 6 at low threshold voltages have been achieved, depending on the isomerization state.…”

Section: Applicationsmentioning

confidence: 99%

Selective Metal-vapor Deposition on Organic Surfaces

Tsujioka

2015

The Chemical Record

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Selective metal-vapor deposition signifies that metal-vapor atoms are deposited on a hard organic surface, but not on a soft (low glass transition temperature, low Tg ) surface. In this paper, we introduce the origin, extension, and applications of selective metal-vapor deposition. An amorphous photochromic diarylethene film shows light-controlled selective metal-vapor deposition, which is caused by a large Tg change based on photoisomerization, but various organic surfaces, including organic crystal and polymers, can be utilized for achieving selective metal-vapor deposition. Various applications of selective metal-vapor deposition, including cathode patterning of organic light-emitting devices, micro-thin-film fuses, multifunctional diffraction gratings, in-plane electrical bistability for memory devices, and metal-vapor integration, have been demonstrated.

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Light‐Tunable Nonvolatile Memory Characteristics in Photochromic RRAM

Ling

Tan

Fang

et al. 2017

Adv Elect Materials

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Light‐tunable resistive switching (RS) characteristics are demonstrated in a photochromophore (BMThCE)‐based resistive random access memory. Triggered by nondestructive ultraviolet or visible light irradiation, two memory‐type RS characteristics can be reversibly modulated in the same device upon a narrow range of applied voltage (<6 V), accompanied by the photochromophores in the active layer reversibly changed between ring‐open state (namely, o‐BMThCE) and ring‐closed state (namely, c‐BMThCE). The o‐BMThCE‐based memory exhibits a write‐once‐read‐many characteristic with a high current on/off ratio of 105, while the c‐BMThCE‐based one shows a flash characteristic. Both of the RS characteristics present good nonvolatile stability with the resistance states maintained over 104 s without variation. This RS modulation is possibly related to the formation and rupture of conductive filaments, which formed along channels consisting of BMThCE trapping molecules. This work provides a new memory element for the design of light‐controllable high density storage and data encryption technology.

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In-plane electrical bistability of photochromic diarylethene/Cu composite film

Cited by 4 publications

References 25 publications

Existence of ferroelectric resistive switching memory in MoS₂/PVDF heterojunction devices

Existence of ferroelectric resistive switching memory in MoS₂/PVDF heterojunction devices

Selective Metal-vapor Deposition on Organic Surfaces

Light‐Tunable Nonvolatile Memory Characteristics in Photochromic RRAM

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In-plane electrical bistability of photochromic diarylethene/Cu composite film

Cited by 4 publications

References 25 publications

Existence of ferroelectric resistive switching memory in MoS2/PVDF heterojunction devices

Existence of ferroelectric resistive switching memory in MoS2/PVDF heterojunction devices

Selective Metal-vapor Deposition on Organic Surfaces

Light‐Tunable Nonvolatile Memory Characteristics in Photochromic RRAM

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Existence of ferroelectric resistive switching memory in MoS₂/PVDF heterojunction devices

Existence of ferroelectric resistive switching memory in MoS₂/PVDF heterojunction devices