In-Plane Gate Transistors for Photodetector Applications

Long-Wavelength In-Plane Gate InAs Quantum-Dot Phototransistors

“…The similar PL peak position with the long cutoff wavelength has confirmed that the extended absorption wavelength comes from the QD absorption. Different from the previous IPGTs of direct channel replacement to InGaAs for detection wavelength extension, the long-wavelength absorption region InAs QDs of Device B is separated from the GaAs channel [9]. In this case, there are two possible current flow paths for the photo-excited electrons in the InAs QDs.…”

“…By inserting a GaAsSbcapped InAs quantum-dot (QD) layer beneath the 2DEG channel, memory device application is also demonstrated with hysteresis observed in the I D −V GS curves under different bias sweeping directions [8]. By replacing the 2DEG channel with a single n-type doped GaAs layer, transistor behaviors can still be observed based on similar operation mechanisms [9]. The device has also demonstrated its potential in photodetector application.…”

Memory device application of wide-channel in-plane gate transistors with type-II GaAsSb-capped InAs quantum dots

“…This device architecture has also been utilized in the current modulation of a single n-type InGaAs sheet resistance which functions as a photodetector. 20 If the same architecture can be applied to InAs QD memory devices, the simplified fabrication procedure would greatly facilitate the feasibility of InAs QDs in memory applications.…”