In-plane interdot carrier transfer in InAs/GaAs quantum dots

Bhattacharyya, Jayeeta; Zybell, S.; Winnerl, Stephan; Helm, M.; Hopkinson, M.; Wilson, L. R.; Schneider, Harald

doi:10.1063/1.3701578

Cited by 7 publications

(3 citation statements)

References 16 publications

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“…Recently, a similar dip structure followed by a gain has been observed in a spectrally resolved PL response in InAs/GaAs QDs, which has been considered to be caused by redistribution of carriers into the neighboring QDs after the bound-to-bound intraband transition excited by a far-infrared free electron laser. 30 Although the carrier redistribution is one of the possible origins of such significant gain, this is unlikely in our case because we detected the spectrally integrated PL response. Another possible origin of the significant gain is an increased carrier density in the GaAs (n C ) by the two-photon absorption process.…”

Section: A Two-color Photoexcitation Spectrum and Enhanced Intraband Transition In Photonic Cavitymentioning

confidence: 75%

Carrier dynamics of the intermediate state in InAs/GaAs quantum dots coupled in a photonic cavity under two-photon excitation

Maeda

Harada

2012

Phys. Rev. B

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We have studied the time-resolved intraband transition from the intermediate state to the continuum state of the conduction band in InAs/GaAs self-assembled quantum dots (QDs) embedded in a one-dimensional photonic cavity structure using two-color photoexcitation spectroscopy. The resonant energy of the photonic cavity was tuned to enhance the intraband transition with an energy smaller than the interband transition energy between the intermediate state and the quantized hole states. The interband photoluminescence intensity was observed to be drastically reduced due to the pumping out of carriers in the intermediate state using near-infrared laser light. We proposed a model describing the carrier relaxation process in the InAs/GaAs QD system, where the two-photon absorption and the Pauli blocking in QDs are considered.

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Section: A Two-color Photoexcitation Spectrum and Enhanced Intraband Transition In Photonic Cavitymentioning

confidence: 75%

Carrier dynamics of the intermediate state in InAs/GaAs quantum dots coupled in a photonic cavity under two-photon excitation

Maeda

Harada

2012

Phys. Rev. B

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“…12 On the other hand, the intraband absorption in InAs/ GaAs QDs has been measured by photoinduced absorption spectroscopy 13,14 and time-resolved photoluminescence (PL) quenching measurements. 15,16 Besides, we recently succeeded in observing an enhancement of the boundto-continuum intraband transition in InAs/GaAs QDs embedded in a photonic cavity by time-resolved PL quenching measurements. 17 By controlling the resonant wavelength of the photonic cavity, we can selectively improve the intraband transition.…”

Section: Introductionmentioning

confidence: 99%

Intraband carrier dynamics in InAs/GaAs quantum dots stimulated by bound-to-continuum excitation

Harada

Maeda

2013

Journal of Applied Physics

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We studied state-filling-dependent intraband carrier dynamics in InAs/GaAs self-assembled quantum dots using two-color photoexcitation spectroscopy. The photoluminescence (PL) intensity was observed to be dramatically reduced by selectively pumping carriers from the intermediate state to the continuum state located above the conduction band edge, and the PL-intensity reduction decreased with an increase in the continuous-wave excitation power. We analyzed the observed state-filling-dependent intraband carrier dynamics by detailed modeling of carrier excitation and relaxation processes in which the two-photon absorption for the interband transition, Pauli blocking, and saturable absorption for the intraband transition is considered. V

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“…5). As an example of an enabling resonance energy transfer mechanism between the quantum dots, we consider generic Dexter-type bidirectional electron transfer [80], which has been shown to occur in self-assembled InAs-based quantum dot chains [81][82][83][84][85][86][87]. It describes a Coulomb-induced direct and spinpreserving exchange of electrons between semiconductor nanostructures, thus requiring electronic wave function overlap between donor and acceptor levels [80,88].…”

Section: Unidirectional Quantum Transport In a Quantum Dot Chainmentioning

confidence: 99%

Unidirectional Quantum Transport in Optically Driven $V$-type Quantum Dot Chains

Kaestle,

Denning,

Mørk

et al. 2020

Preprint

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We predict a mechanism for achieving complete population inversion in a continuously driven InAs/GaAs semiconductor quantum dot featuring V -type transitions. This highly nonequilibrium steady state is enabled by the interplay between V -type interband transitions and a non-Markovian decoherence mechanism, introduced by acoustic phonons. The population trapping mechanism is generalized to a chain of coupled emitters. Exploiting the population inversion, we predict unidirectional excitation transport from one end of the chain to the other without external bias, independent of the unitary interdot coupling mechanism.

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In-plane interdot carrier transfer in InAs/GaAs quantum dots

Cited by 7 publications

References 16 publications

Carrier dynamics of the intermediate state in InAs/GaAs quantum dots coupled in a photonic cavity under two-photon excitation

Carrier dynamics of the intermediate state in InAs/GaAs quantum dots coupled in a photonic cavity under two-photon excitation

Intraband carrier dynamics in InAs/GaAs quantum dots stimulated by bound-to-continuum excitation

Unidirectional Quantum Transport in Optically Driven $V$-type Quantum Dot Chains

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