The interaction between magnetic impurities and the gapless surface state is of critical importance for realizing novel quantum phenomena and new functionalities in topological insulators. By combining angle-resolved photoemission spectroscopic experiments with density functional theory calculations, we show that surface deposition of Cr atoms on Bi 2 Se 3 does not lead to gap opening of the surface state at the Dirac point, indicating the absence of long-range out-of-plane ferromagnetism down to our measurement temperature of 15 K. This is in sharp contrast to bulk Cr doping, and the origin is attributed to different Cr occupation sites. These results highlight the importance of nanoscale configuration of doped magnetic impurities in determining the electronic and magnetic properties of topological insulators.Three dimensional (3D) topological insulator (TI), a novel class of materials, 1,2 is a topologically nontrivial bulk insulator with conducting surface state (SS). Protected by the time-reversal symmetry (TRS), the SS is spin-polarized, gapless and robust against nonmagnetic impurities. [3][4][5][6] Meanwhile, magnetic impurities may induce out-of-plane ferromagnetism and break the TRS in TI, resulting in a band gap at the Dirac point of the SS. 7 Such TRS breaking is essential for the realization of various novel quantum phenomena which have great application potential in future nano-electronic and spintronic devices, such as quantum anomalous Hall effect (QAHE), 8-11 topological magnetoelectric effect (TME) 12 and birefringent spin lens. 13 Thus, it is critical to understand the interaction between 3D TIs and magnetic impurities both for fundamental physics and nano-device applications.The interaction between 3D TI and doped magnetic impurities can modify the electronic and magnetic properties of 3D TI, and the results may strongly depend on the types of magnetic atoms, occupation sites of the magnetic impurities 14 and experimental conditions 2 under which they are introduced. For example, although doping Fe and Cr into the bulk Bi 2 Se 3 crystal or thin film during the growth process leads to a gap opening at the Dirac point suggesting TRS breaking, 7,15-17 the robustness of the gapless SS against Fe deposition on the surface has been debated 18,19 and surface deposition of Cr still remains to be investigated.Here we present a combined experimental and theoretical study of the electronic structures of Bi 2 Se 3 upon surface deposition of magnetic Cr atoms on freshly cleaved Bi 2 Se 3 single crystals. Angle-resolved photoemission spectroscopy (ARPES) data show that the SS is robust upon surface deposition of Cr, and the absence of gap opening at the Dirac point suggests that there is no long-range out-of-plane ferromagnetism down to the lowest measurement temperature of 15 K. In addition, Cr atoms dope electrons to the bulk states of Bi 2 Se 3 forming a two-dimensional electron gas with large Rashba-splitting on the surface. These While doping electrons to the SS with preserved TRS, Cr deposit...