2012
DOI: 10.1103/physrevlett.108.256811
|View full text |Cite
|
Sign up to set email alerts
|

In-Plane Magnetic Anisotropy of Fe Atoms onBi2Se3(111)

Abstract: The robustness of the gapless topological surface state hosted by a 3D topological insulator against perturbations of magnetic origin has been the focus of recent investigations. We present a comprehensive study of the magnetic properties of Fe impurities on a prototypical 3D topological insulator Bi2Se3 using local low temperature scanning tunneling microscopy and integral x-ray magnetic circular dichroism techniques. Single Fe adatoms on the Bi2Se3 surface, in the coverage range ≈ 1% are heavily relaxed into… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

16
186
4
2

Year Published

2012
2012
2020
2020

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 163 publications
(208 citation statements)
references
References 31 publications
16
186
4
2
Order By: Relevance
“…This is in agreement with angle-resolved photoemission spectroscopy (ARPES) measurements of magnetically doped bismuth chalcogenide surfaces exhibiting a feature near the DP which resembles a gap [36,37]. On the other hand, magnetic measurements found no evidence of the long-range FM order in the systems of Fe and Co adatoms at the Bi 2 Te 3 [38] and Bi 2 Se 3 [39][40][41] surfaces (the coverage in the latter case was reaching 0.9 monolayer). Accordingly, several ARPES studies report the absence of the DP gap opening in such systems [40][41][42][43][44][45].…”
Section: Introductionsupporting
confidence: 77%
See 1 more Smart Citation
“…This is in agreement with angle-resolved photoemission spectroscopy (ARPES) measurements of magnetically doped bismuth chalcogenide surfaces exhibiting a feature near the DP which resembles a gap [36,37]. On the other hand, magnetic measurements found no evidence of the long-range FM order in the systems of Fe and Co adatoms at the Bi 2 Te 3 [38] and Bi 2 Se 3 [39][40][41] surfaces (the coverage in the latter case was reaching 0.9 monolayer). Accordingly, several ARPES studies report the absence of the DP gap opening in such systems [40][41][42][43][44][45].…”
Section: Introductionsupporting
confidence: 77%
“…Accordingly, several ARPES studies report the absence of the DP gap opening in such systems [40][41][42][43][44][45]. The suppression of the long-range FM order may stem from the nonuniform distribution of magnetic adsorbates on the TI surface, that tend to form clusters when their coverage is around 0.1 monolayer or higher [39,40,44,46]. This situation may be partly overcome by annealing, as it triggers the diffusion of the adsorbates inside the TI bulk, where they substitute Bi atoms [44,47,48].…”
Section: Introductionmentioning
confidence: 99%
“…For example, although doping Fe and Cr into the bulk Bi 2 Se 3 crystal or thin film during the growth process leads to a gap opening at the Dirac point suggesting TRS breaking, 7,15-17 the robustness of the gapless SS against Fe deposition on the surface has been debated 18,19 and surface deposition of Cr still remains to be investigated.…”
mentioning
confidence: 99%
“…Although numerous studies aimed to shed light on the role played by magnetic perturbations, contradictory results have been obtained and a clear picture is still missing [16][17][18][19][20][21][22][23][24][25] . Results published so far seem to suggest that surface-and bulk-doped samples behave quite differently.…”
mentioning
confidence: 99%