In-plane polarization anisotropy of the spontaneous emission of <i>M</i>-plane GaN/(Al,Ga)N quantum wells

Rau, B.; Waltereit, Patrick; Brandt, O.; Ramsteiner, M.; Puls, J.; Henneberger, F.

doi:10.1063/1.1326846

Cited by 86 publications

(55 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…6. This degree of polarization is even larger than the value of 90% for M-plane GaN/Al 0.1 Ga 0.9 N MQWs as previously reported [9]. The large in-plane polarization anisotropy in M-plane (In,Ga)N/GaN MQWs has probably the same origin as the one for M-plane GaN films.…”

Section: E I E E I E I E ρsupporting

confidence: 52%

See 1 more Smart Citation

Polarization properties of nonpolar GaN films and (In,Ga)N/GaN multiple quantum wells

Grahn

2004

Physica Status Solidi (b)

View full text Add to dashboard Cite

We have realized nonpolar GaN films and (In,Ga)N/GaN multiple quantum wells (MQWs) by plasmaassisted molecular-beam epitaxy on γ-LiAlO 2 (100) substrates. The GaN films and (In,Ga)N/GaN MQWs are grown in an M-plane configuration, i.e., the c-axis of the wurtzite unit cell lies in the growth plane. For compressively and anisotropically strained M-plane GaN films, the band structure of the valence band changes in such a way that the optical transmittance becomes 100% linearly polarized for two orthogonal in-plane directions, where one of these directions is parallel to the c-axis of the GaN film. Within a certain energy range, the M-plane GaN film thereby acts as a polarization filter. The photoluminescence spectra of M-plane In 0.1 Ga 0.9 N/GaN MQWs exhibit a strong in-plane optical anisotropy for linear polarization with an energy-dependent polarization degree of up to 96%, which is presumably also due to a large valence-band splitting induced by the large compressive strain in the QWs.

show abstract

Section: E I E E I E I E ρsupporting

confidence: 52%

“…Furthermore, an in-plane polarization anisotropy has been observed in the photoluminescence (PL) spectra of GaN/(Al,Ga)N [9] and (In,Ga)N/GaN [10] MQWs. The band structure [11] and the in-plane polarization properties [12,13] of strained M-plane GaN films have been recently investigated.…”

Section: Introductionmentioning

confidence: 97%

Polarization properties of nonpolar GaN films and (In,Ga)N/GaN multiple quantum wells

Grahn

2004

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…The effect of the strain anisotropy on the optical response and electronic band structure has been experimentally studied for c-plane GaN films grown on a-plane sapphire, 8,9 a-plane GaN films grown on r-plane sapphire, 10,11 and m-plane GaN films. [12][13][14] The impact of anisotropic strain on the lattice parameters of c-plane GaN films grown on a-plane sapphire 15 and on the structural properties of a-plane GaN ͑Refs. 16 and 17͒ has also been reported.…”

Section: Introductionmentioning

confidence: 99%

Anisotropic strain and phonon deformation potentials in GaN

et al. 2007

View full text Add to dashboard Cite

show abstract

“…Furthermore, an inplane polarization anisotropy exists for GaN/(Al,Ga)N MQWs [6] and (In,Ga)N/GaN MQWs [7] in emission. The band structure [8] and the in-plane polarization properties [9] of strained M-plane GaN films have been recently investigated.…”

mentioning

confidence: 97%

Angular dependence of the in‐plane polarization anisotropy in the absorption coefficient of strained M‐plane GaN films on γ‐LiAlO₂

Misra

Sun

Brandt

et al. 2003

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

We investigate the in-plane polarization properties of GaN films grown by plasma-assisted molecularbeam epitaxy on LiAlO 2 (100). Due to the crystal symmetry of LiAlO 2 (100), GaN films can be realized in a nonpolar (M-plane) configuration, i.e., the c-axis of the wurtzite unit cell lies in the growth plane. For strained M-plane GaN films, the band structure of the valence band changes in such a way that the optical transmittance is completely linearly polarized for two orthogonal in-plane directions, where one of these directions is parallel to the c-axis of the GaN film. The transmittance for an arbitrary in-plane polarization angle can be described as a linear combination of the transmittance for two orthogonal polarization, one of which is parallel to the c-axis.1 Introduction The internal quantum efficiency of GaN-based light-emitting devices is still not optimized due to the presence of electrostatic fields within the active layer, which usually consists of a heterostructure such as a quantum well. These electrostatic fields are generated by the spontaneous and piezoelectric polarization along the ½0001 axis of the hexagonal group-III nitrides. The film growth direction is usually along ½0001, i.e., C-plane films, so that these electrostatic fields will separate the electron and hole wave-functions in quantum well structures. The resulting reduction in the wave-function overlap decreases the radiative efficiency for light-emitting devices. A way to overcome this problem is to realize quantum-well structures with the c-axis of the wurtzite unit cell being in the growth plane in order to achieve a nonpolar direction, e.g. Second, for in-plane strain values smaller than À0:2%, which are typical for our films, the valence band structure is changed in such a way that the transition T 1 between the uppermost valence band and the conduction band becomes completely linearly polarized in the x-direction, while the transition T 2 of the second uppermost valence band with the conduction band is completely linearly polarized in the z-direction, which is parallel to the c-axis of the film. The third upper-

show abstract

In-plane polarization anisotropy of the spontaneous emission of M-plane GaN/(Al,Ga)N quantum wells

Cited by 86 publications

References 8 publications

Polarization properties of nonpolar GaN films and (In,Ga)N/GaN multiple quantum wells

Polarization properties of nonpolar GaN films and (In,Ga)N/GaN multiple quantum wells

Anisotropic strain and phonon deformation potentials in GaN

Angular dependence of the in‐plane polarization anisotropy in the absorption coefficient of strained M‐plane GaN films on γ‐LiAlO₂

Contact Info

Product

Resources

About

In-plane polarization anisotropy of the spontaneous emission of M-plane GaN/(Al,Ga)N quantum wells

Cited by 86 publications

References 8 publications

Polarization properties of nonpolar GaN films and (In,Ga)N/GaN multiple quantum wells

Polarization properties of nonpolar GaN films and (In,Ga)N/GaN multiple quantum wells

Anisotropic strain and phonon deformation potentials in GaN

Angular dependence of the in‐plane polarization anisotropy in the absorption coefficient of strained M‐plane GaN films on γ‐LiAlO2

Contact Info

Product

Resources

About

Angular dependence of the in‐plane polarization anisotropy in the absorption coefficient of strained M‐plane GaN films on γ‐LiAlO₂