In-plane volume and interface magnetic anisotropies in epitaxial Fe films on GaAs(001)

Complementary spin-Hall and inverse spin-galvanic effect torques in a ferromagnet/semiconductor bilayer

“…From the magnetization angle dependence of the resonance field, we obtained the magnetization amplitude value of m 0 M s ¼ 1.85±0.03 T, which is close to the literature value of 1.7 T for Fe 31 , and we found an in-plane uniaxial anisotropy of m 0 H U ¼ 0.101±0.001 T, which is typical for thin films of Fe grown on GaAs 32 . By solving the LandauLifshitz-Gilbert equation for a small current-induced excitation field, (h x , h y , h z )e jot , V d.c. is found to be comprised of symmetric and antisymmetric Lorentzian functions with coefficients V sym and V asy , respectively.…”

Ultrathin epitaxial Fe films on vicinal GaAs(001): A study by spin-resolved photoelectron spectroscopy

“…2 As a model system, FeGaAs͑001͒ has attracted attention, particularly because of its growth behavior. [3][4][5][6] However, while there has been a report on the magnetic anisotropy of Fe films on vicinal Au and Ag surfaces, 7 work on Fe films grown on GaAs substrates has concentrated on singular GaAs surfaces. In this letter, we report an investigation of epitaxial Fe films grown directly on vicinal GaAs͑001͒ substrates, which shows that the presence of steps on the surface significantly influences the properties of the Fe overlayers.…”

Thermal enhancement of the antiferromagnetic exchange coupling between Fe epilayers separated by a crystalline ZnSe spacer

“…This contribution is induced at the ZnSe/Fe interface and has been previously reported for ZnSe/Fe and GaAs/Fe structures 27,28 . This anisotropy has not been observed in the iron thicker layer, probably, due to the fact that the anisotropy scales with 1/t and thus it is negligible for the top layer.…”